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MUR860F

CategoryDiscrete semiconductor    Fast recovery diode   
File Size161KB,1 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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MUR860F
8.0AMPS. GLASS PASSIVATED SUPER FAST RECTIFIERS
FEATURE
.Low
forward voltage drop
.High
current capability
.High
reliability
.High
surge current capability
.Epitaxial
construction
.High
temperature soldering guaranteed
260° /10seconds, 0.25"(6.35mm)from case.
C
B
G
H
C
A
PIN 1
2
1.6MAX
ITO-220AC
L
I
Dim
A
B
C
D
E
F
G
H
MECHANICAL DATA
.Terminal:
Plated solderable per MIL-STD 202E, method
208C
.Case:
Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
.Polarity:
color band denotes cathode
.Mounting
position: any
D
F
P P
E
J
K
I
J
K
L
P
Min
.571(14.5)
――
.110(2.80)
---
.512(13.0)
.020(0.5)
.114(2.9)
.268(6.8)
.162(4.1)
.110(2.8)
.020(0.5)
.097(2.46)
.89(2.25)
Max
.610(15.5)
.406(10.3)
.126(3.2)
.162(4.1)
.551(14.0)
.031(0.78)
.138(3.5)
.291(7.4)
.185(4.7)
.126(3.2)
.028(0.7)
.113(2.86)
.113(2.85)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°
C
Peak Forward Surge Current 8.3ms single half
sine- wave superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 8.0A DC
Maximum DC Reverse Current
at rated DC blocking voltage
@T
A
=25°
C
@ T
A
=125°
C
V
F
I
R
t
rr
C
J
R
(JC)
T
STG
T
J
2.3
10.0
400.0
50
60
3.2
-55 to +150
-55 to +150
V
µA
ns
pF
°
C/W
°
C
°
C
I
FSM
120.0
A
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
MUR860F
600
420
600
8.0
units
V
V
V
A
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage Temperature
Operation Junction Temperature
Note:
1. Test Conditions:
I
F
=8A , dI
F
/dt=200A/μs
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance From Junction to Case Mounted on Heatsink
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