Cache DRAM Module, 32MX16, 0.7ns, CMOS, PDSO66
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Objectid | 1126060197 |
package instruction | TSSOP, TSSOP66,.46 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum access time | 0.7 ns |
Maximum clock frequency (fCLK) | 166 MHz |
I/O type | COMMON |
interleaved burst length | 2,4,8 |
JESD-30 code | R-PDSO-G66 |
JESD-609 code | e3 |
memory density | 536870912 bit |
Memory IC Type | CACHE DRAM MODULE |
memory width | 16 |
Number of terminals | 66 |
word count | 33554432 words |
character code | 32000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 32MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSSOP |
Encapsulate equivalent code | TSSOP66,.46 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Continuous burst length | 2,4,8 |
Maximum standby current | 0.005 A |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | GULL WING |
Terminal pitch | 0.635 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |