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V58C2512164SAE6

Description
Cache DRAM Module, 32MX16, 0.7ns, CMOS, PDSO66
Categorystorage    storage   
File Size906KB,60 Pages
ManufacturerProMOS Technologies Inc
Environmental Compliance  
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V58C2512164SAE6 Overview

Cache DRAM Module, 32MX16, 0.7ns, CMOS, PDSO66

V58C2512164SAE6 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1126060197
package instructionTSSOP, TSSOP66,.46
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time0.7 ns
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
JESD-609 codee3
memory density536870912 bit
Memory IC TypeCACHE DRAM MODULE
memory width16
Number of terminals66
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length2,4,8
Maximum standby current0.005 A
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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