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KSH41CTM

Description
transistor npn 100v 6A dpak
CategoryDiscrete semiconductor    The transistor   
File Size51KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSH41CTM Overview

transistor npn 100v 6A dpak

KSH41CTM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-252
package instructionLEAD FREE, DPAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
KSH41C
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
100
100
5
6
10
2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
I
C
= 6A, I
B
= 600mA
V
CE
= 6A, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
3
30
15
Min.
100
Max.
50
10
0.5
75
1.5
2
V
V
MHz
Units
V
µA
uA
mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002

KSH41CTM Related Products

KSH41CTM KSH41CITU
Description transistor npn 100v 6A dpak transistor npn 100v 6A I-pak
Is it Rohs certified? conform to conform to
Parts packaging code TO-252 TO-251
package instruction LEAD FREE, DPAK-3 IPAK-3
Contacts 3 3
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Is Samacsys N N
Maximum collector current (IC) 6 A 6 A
Collector-emitter maximum voltage 100 V 100 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JEDEC-95 code TO-252 TO-251
JESD-30 code R-PSSO-G2 R-PSIP-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 20 W 20 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
Base Number Matches 1 1

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