HAT2169H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0119-0400
Rev.4.00
Sep 20, 2005
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.8 m
Ω
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
4
4
G
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
3
12
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Note1
Ratings
40
±20
50
200
50
30
72
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.4.00 Sep 20, 2005 page 1 of 7
HAT2169H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
40
±20
—
—
1.0
—
—
39
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.8
4.0
65
6650
890
360
0.5
45
21
10
15
64
55
9.5
0.83
40
Max
—
—
±10
1
2.5
3.5
6.0
—
—
—
—
—
—
—
—
—
—
—
—
1.08
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
GS
= 10 V
Note4
I
D
= 25 A, V
GS
= 4.5 V
Note4
I
D
= 25 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 50 A
V
GS
= 10 V, I
D
= 25 A,
V
DD
≅
10 V, R
L
= 0.4
Ω,
Rg = 4.7
Ω
IF = 50 A, V
GS
= 0
Note4
IF = 50 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
Rev.4.00 Sep 20, 2005 page 2 of 7
HAT2169H
Main Characteristics
Power vs. Temperature Derating
40
500
100
Maximum Safe Operation Area
Pch (W)
I
D
(A)
30
10
Channel Dissipation
20
Drain Current
1m
PW
s
DC
= 1
0m
Op
era
s
tio
n
10
10
µ
s
0
µ
s
1
10
Operation in
this area is
limited by R
DS(on)
Tc = 25°C
1 shot Pulse
0.3
1
3
10
30
100
0.1
0
50
100
150
200
0.01
0.1
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
10 V
4.5 V
3.8 V
Pulse Test
3.6 V
100
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
80
I
D
(A)
Drain Current
80
3.4 V
60
60
3.2 V
Tc = 75°C
40
Drain Current
40
20
V
GS
= 3.0 V
20
25°C
–25°C
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
Pulse Test
30
10
V
GS
= 4.5 V
3
10 V
1
0.3
0.1
1
3
10
30
100
300
1000
Drain to Source Voltage V
DS(on)
(mV)
150
I
D
= 50 A
100
20 A
10 A
50
0
4
8
12
16
20
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Rev.4.00 Sep 20, 2005 page 3 of 7
HAT2169H
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
1000
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
V
DS
= 10 V
Pulse Test
10
30
100
25°C
Tc = –25°C
75°C
I
D
= 10 A, 20 A
50 A
V
GS
= 4.5 V
6
4
10 A, 20 A, 50 A
2
0
-25
10 V
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
3000
1000
300
100
30
10
100
0
5
10
15
20
Coss
Crss
Body-Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
50
20
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
Capacitance C (pF)
10
0.1
V
GS
= 0
f = 1 MHz
25
30
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 50 A
V
DD
= 5 V
10 V
25 V
V
DS
= 25 V
V
DD
10 V
5V
0
200
V
GS
16
12
Switching Characteristics
V
GS
(V)
20
1000
300
100
30
td(on)
10
tr
3
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty < 1 %
2
5 10 20
50 100
tf
td(off)
50
40
Drain to Source Voltage
30
20
8
10
4
Gate to Source Voltage
Switching Time t (ns)
0
40
80
120
160
0.1 0.2 0.5 1
Gate Charge
Qg (nc)
Drain Current
I
D
(A)
Rev.4.00 Sep 20, 2005 page 4 of 7
HAT2169H
Reverse Drain Current vs.
Source to Drain Voltage
100
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I
AP
= 30 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
Reverse Drain Current I
DR
(A)
80
Repetitive Avalanche Energy E
AR
10 V
5V
V
GS
= 0
80
60
60
40
40
20
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
20
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γs
(t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch
- c(t) =
γs
(t)
• θch
- c
θch
- c = 4.17°C/ W, Tc = 25°C
P
DM
lse
pu
t
0.05
0.03
0.02
1
0.0
1s
D=
PW
T
PW
T
ho
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Rev.4.00 Sep 20, 2005 page 5 of 7
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