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HAT2169H

Description
silicon N channel power mos fet power switching
File Size82KB,8 Pages
ManufacturerRenata SA
Websitehttp://www.renata.com/
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HAT2169H Overview

silicon N channel power mos fet power switching

HAT2169H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0119-0400
Rev.4.00
Sep 20, 2005
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.8 m
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
4
4
G
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
3
12
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tch = 25°C, Rg
50
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Note1
Ratings
40
±20
50
200
50
30
72
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.4.00 Sep 20, 2005 page 1 of 7

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Description silicon N channel power mos fet power switching silicon N channel power mos fet power switching

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