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CD4775

Description
8.5 V, SILICON, VOLTAGE REFERENCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size138KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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8.5 V, SILICON, VOLTAGE REFERENCE DIODE

• MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• 8.5 & 9.1 VOLT NOMINAL ZENER VOLTAGE +5%
• ELECTRICALLY EQUIVALENT TO 1N4765 THRU 1N4772A AND
1N4775 THRU 1N4782A SERIES
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD4765 thru CD4767A
and
CD4770 thru CD4772A
and
CD4775 thru CD4777A
and
CD4780 thru CD4782A
38
23
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
38
TYPE
NUMBER
ZENER
VOLTAGE
vz @ I
ZT
(Note 3)
VOLTS
CD4765
CD4765A
CD4766
CD4766A
CD4767
CD4767A
CD4770
CD4770A
CD4771
CD4771A
CD4772
CD4772A
CD4775
CD4775A
CD4776
CD4776A
CD4777
CD4777A
CD4780
CD4780A
CD4781
CD4781A
CD4782
CD4782A
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
mA
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
MAXIMUM
VOLTAGE
TEMPERATURE
EFFECTIVE
ZENER
TEMPERATURE
RANGE
TEMPERATURE
IMPEDANCE
STABILITY
COEFFICIENT
Z
∆V
ZT
ZT
MAXIMUM
(Note 1)
OHMS
350
350
350
350
350
350
200
200
200
200
200
200
350
350
350
350
350
350
200
200
200
200
200
200
(Note 2)
mV
68
141
34
70
14
28
68
141
34
70
14
28
64
132
32
66
13
26
64
132
32
66
13
26
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
0
-55
°C
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
to
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
75
100
% / °C
0.01
0.01
0.005
0.005
0.002
0.002
0.01
0.01
0.005
0.005
0.002
0.002
0.01
0.01
0.005
0.005
0.002
0.002
0.01
0.01
0.005
0.005
0.002
0.002
23
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
FIGURE 1
DESIGN DATA
METALLIZATION:
Top: C (Cathode)................. ..Al
A (Anode).......................Al
Back: ......................................Au
AL THICKNESS.......
.....25,000
Å
Min
GOLD THICKNESS...
.....4,000
Å
Min
CHIP THICKNESS.............
.....10 Mils
CIRCUIT LAYOUT DATA:
Backside must be electrically
isolated.
Backside is not cathode.
For Zener operation cathode
must be operated positive
with respect to anode.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current
equal to 10% of lZT.
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specified mV at any discrete temperature
between the established limits, per JEDEC standard No.5.
Zener voltage range is +5%
TOLERANCES:
ALL
Dimensions + 2 mils
NOTE 2
NOTE 3
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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