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1S2638

CategoryDiscrete semiconductor    varactor   
File Size266KB,2 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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1S2638
VARIABLE CAPACITANCE DIODE SILICON TYPE
Application
.
Frequency modulation in FM Radio
.
FM and AFC in communication set
Features
.
Excellent linearity
.
Low series resistance:
.
package:SOD-323
rs≤0.8Ω
Maximum ratings
Parameter
Assignment Temperature Range
Storage Temperature Range
Maximum Reverse voltage
Junction Temperature
Forward voltage(I
F
=20mA)
Symbol
T
amb
T
atg
V
RM
T
j
V
F
Rating
Min
-55
-55
Max
100
125
10
125
1
Unit
V
V
Electrical Characteristics(at T
amb
=25℃)
Parameter
Symbol
Test Conditions
Diode capacitance
C
j
V
R1
=4V
Reverse Current
I
R
V
R
=10V
Forward Voltage
V
F
I
F
=20mA
serises resistance
r
s
F=470MHz,C
0
=14pF
Min
5
Typ
8
Max
12
100
1
0.8
Unit
PF
nA
V
Ω
REV.08
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