Ordering number : ENA0920
CPH3249
SANYO Semiconductors
DATA SHEET
CPH3249
Features
•
•
•
•
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, duty cycle≤10%
Mounted on a ceramic board (600mm
✕0.8mm)
2
Conditions
Ratings
700
350
8
1
2
0.5
0.9
150
--55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
Conditions
VCB=350V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
100
10
60
20
8
MHz
pF
Ratings
min
typ
max
10
10
200
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907CB TI IM TC-00000870 No. A0920-1/4
CPH3249
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
700
350
8
1.0
2.5
0.3
Ratings
min
typ
max
0.8
1.5
Unit
V
V
V
V
V
µs
µs
µs
Note : Since the above stated product is a high-voltage device, so please pay attention to its reliability when in use.
Package Dimensions
unit : mm (typ)
7015A-005
2.9
0.15
Switching Time Test Circuit
0.6
PW=20µs
D.C.≤1%
INPUT
VR
IB1
OUTPUT
IB2
RB
3
0.2
RL
100Ω
+
470µF
VCC=200V
2.8
1.6
0.05
50Ω
+
100µF
0.6
1
0.95
2
0.4
1 : BaseEmitter
2 : Emitter
3 : Collector
SANYO : CPH3
VBE= --5V
0.9
0.2
mA
1.0
0.9
IC -- VCE
200
150mA
1.0
0.9
IC -- VBE
VCE=5V
Collector Current, IC -- A
Collector Current, IC -- A
0.8
0.7
0.6
0.5
0.4
0.3
100mA
90mA 80mA 70mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10mA
60mA 50mA 40mA
0.2
0.1
0
0
1
2
3
4
5
6
IB=0mA
7
8
IT12843
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT12844
Collector-to-Emitter Voltage, VCE -- V
1000
7
5
3
2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
3
2
hFE -- IC
VCE=5V
Ta=120°C
25°C
Ta=
1
20
°
C
25
°
C
--40
°
C
VC
V
=5
E
2V
30mA
20mA
100
DC Current Gain, hFE
DC Current Gain, hFE
100
7
5
3
2
10
7
5
3
2
1.0
0.001
2
3
5 7 0.01
--40
°
C
7
5
3
2
1V
0.7
V
10
7
5
3
0.001
2
3
5 7 0.1
2
3
Collector Current, IC -- A
5 7 1.0
IT12845
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Collector Current, IC -- A
5 7 1.0
IT12846
No. A0920-2/4
CPH3249
10
7
5
VCE(sat) -- IC
IC / IB=5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
10
7
5
3
2
VCE(sat) -- IC
25
°
C
5 7 0.01
2
3
5 7 0.1
2
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
IT12847
°
C
25
Ta=
1.0
7
5
3
2
°
C
120
0
--4
°
C
0.1
7
0.001
2
3
3
Ta=12
0
°
C
Collector Current, IC -- A
10
7
VBE(sat) -- IC
Collector Current, IC -- A
1.0
5 7 1.0
IT12848
SW Time -- IC
IC / IB=5
Switching Time, SW Time --
µs
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
7
IC / IB1=10
IB2 / IB1=10
R load
tstg
5
25
°
C
1.0
7
5
3
2
Ta=
--40
°
C
120
°
C
3
tf
2
0.1
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5
3
2
Forward Bias A S O
ICP=2A
IC=1A
1m
Collector Current, IC -- A
5 7 1.0
IT12849
0.1
0.1
2
3
5
7
5
3
2
Reverse Bias A S O
Collector Current, IC -- A
1.0
IT12850
Collector Current, IC -- A
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
DC
1.0
7
5
3
2
0.1
7
5
3
2
op
er
ati
o
n
0.001
0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm
2
✕0.8mm)
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
5 7
0.01
100
Tc=25
°
C
IB2= --0.2A
L=500µH
Single pulse
2
3
5
7
Collector-to-Emitter Voltage, VCE -- V
1000
900
IT12851
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
1000
IT12852
Collector Dissipation, PC -- mW
M
800
ou
nt
ed
on
600
ac
er
am
ic
b
oa
rd
400
(6
00
m
m
2
✕
200
0.
8m
m
)
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT12853
No. A0920-3/4
--40
°
C
3
=
PT
s
0
µ
10
s
0
µ
30
s
10
m
s
CPH3249
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0920-4/4
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