DTD133HKT146 datasheet, PDF - EEWORLD Datasheet

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DTD133HKT146: Descriptiontrans prebias npn 200mw smt3; CategoryDiscrete semiconductor The transistor; File Size66KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTD133HKT146 Overview

trans prebias npn 200mw smt3

DTD133HKT146 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 3
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

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DTD133H

Transistors

Digital transistors (Includes resistors)

DTD133H

Features

1) A built-in bias resistor allows inverter circuit configuration

without external resistors for input (see equivalent circuit

diagram).

2) The bias resistor consists of a thin-film resistor which is

completely isolated, providing the capability to negative-bias the

input, and avoiding parasitic effects.

3) Operation starts by simply setting On/Off conditions, simplifying

the design of equipment using the transistors.

4) High packing density.

External dimensions

(Units : mm)

DTD133HK

(1)

0.4

(3)

1.6

2.8

0.15

0.3to0.6

0to0.1

Each lead has same dimensions

ROHM : SMT3

EIAJ : SC-59

(1) GND

(2) IN

(3) OUT

Absolute maximum ratings

(Ta=25°C)

Parameter

Supply voltage

Input voltage

Output current

DTD133HK

Power

dissipation DTD133HS

Junction temperature

Storage temperature

Symbol

Tstg

Limits

−6~+20

500

200

300

150

−55~+150

Unit

°C

DTD133HS

(15Min.)

3Min.

0.45

2.5

(1) (2) (3)

0.5 0.45

0.8

ROHM : SPT

EIAJ : SC-72

(1) GND

(2) OUT

(3) IN

Package, marking, and packaging specifications

Part No.

Package

Marking

Packaging code

Basic ordering unit (pieces)

DTD133HK

SMT3

G08

T146

3000

DTD133HS

SPT

5000

Equivalent circuit

OUT

GND

OUT

Electrical characteristics

(Ta=25°C)

Parameter

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Symbol

I(off)

I(on)

O(on)

O(off)

Min.

−

2.0

−

2.4

−

Typ.

−

0.1

−

3.3

3.0

200

Max.

0.5

−

0.3

2.4

0.5

−

3.7

−

Unit

µA

−

kΩ

−

MHz

Conditions

=5V

, I

=100µA

=0.3V

, I

=20mA

=50mA

, I

=2.5mA

=5V

=50V

, V

=0V

=50mA

, V

=5V

−

=10V

, I

=−5mA

, f=100MHz

1.1

0.95 0.95

1.9

2.9

(2)

Taping specifications

Transition frequency

∗

Transition frequency of the device.

∗

1/2

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