Flash Memory,
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Objectid | 8311617385 |
package instruction | HVSON, |
Reach Compliance Code | compliant |
Country Of Origin | Mainland China, Taiwan |
ECCN code | EAR99 |
YTEOL | 5.75 |
Other features | ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY |
Spare memory width | 1 |
Maximum clock frequency (fCLK) | 166 MHz |
Data retention time - minimum | 20 |
Durability | 100000 Write/Erase Cycles |
JESD-30 code | R-PDSO-N8 |
length | 8 mm |
memory density | 134217728 bit |
Memory IC Type | FLASH |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 8 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
organize | 16MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | HVSON |
Encapsulate equivalent code | SOLCC8,.3 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
Parallel/Serial | SERIAL |
Peak Reflow Temperature (Celsius) | 260 |
Programming voltage | 3 V |
Filter level | AEC-Q100 |
Maximum seat height | 0.8 mm |
Serial bus type | SPI |
Maximum standby current | 0.00007 A |
Maximum slew rate | 0.03 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 3 V |
surface mount | YES |
technology | CMOS |
Temperature level | AUTOMOTIVE |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
type | NOR TYPE |
width | 6 mm |
write protect | HARDWARE/SOFTWARE |