V826616B24SCTL-D0 datasheet, PDF

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V826616B24SCTL-D0: DescriptionCache DRAM Module, 16MX64, 0.65ns, CMOS, PDMA200; Categorystorage storage; File Size195KB，14 Pages; ManufacturerProMOS Technologies Inc

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V826616B24SCTL-D0 Overview

Cache DRAM Module, 16MX64, 0.65ns, CMOS, PDMA200

V826616B24SCTL-D0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1126060255
package instruction	DIMM, DIMM200,24
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.65 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
memory density	1073741824 bit
Memory IC Type	CACHE DRAM MODULE
memory width	64
Number of terminals	200
word count	16777216 words
character code	16000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	1.6 mA
Nominal supply voltage (Vsup)	2.6 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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V826616B24SC

128 MB 200-PIN DDR UNBUFFERED

SODIMM 16M x 64

Features

■

JEDEC 200 Pin DDR Unbuffered Small-Outline,

Dual In-Line memory module (SODIMM);

16,777,216 x 64 bit organization.

■

Utilizes High Performance 16M x 16 DDR

SDRAM in TSOPII-66 Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

DDR SDRAM Performance

Component Used -6

-7

Module Speed

-75

-8

Description

The V826616B24SC memory module is

organized 16,777,216 x 64 bits in a 200 pin memory

module. The 16M x 64 memory module uses 4

ProMOS 16M x 16 DDR SDRAM. The x64 modules

are ideal for use in high performance computer

systems where increased memory density and fast

access times are required.

Clock Frequency

166

143

133

125

(PC333) (PC266A) (PC266B) (PC200)

200

(max.)Clock Frequency (max.)

(PC400A)

200

(PC400B)

166

(PC333)

Units

MHz

CLK

Clock Access Time

7.5

Clock Cycle

CAS Latency = 2.5Time CAS Latency = 2

Clock Cycle Time CAS Latency = 2.5

Clock Cycle Time CAS Latency = 3

7.5

RCD

tRCD parameter

tRP parameter

V826616B24SC Rev. 1.2 April 2006

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