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CPV363M4KPBF

Description
igbt transistor 600 volt 6.0 amp
CategoryDiscrete semiconductor    The transistor   
File Size242KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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CPV363M4KPBF Overview

igbt transistor 600 volt 6.0 amp

CPV363M4KPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionROHS COMPLIANT, IMS-2, SIP-13
Contacts13
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresULTRA FAST SOFT RECOVERY
Shell connectionISOLATED
Maximum collector current (IC)11 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XSFM-T13
Number of components6
Number of terminals13
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)36 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)405 ns
Nominal on time (ton)78 ns
VCEsat-Max2.1 V
CPV363M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed over 5.0 kHz (see fig. 1 for current vs.
frequency curve), and short circuit rated to 10 µs
at 125 °C, V
GE
= 15 V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Totally lead (Pb)-free
RoHS
COMPLIANT
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I
RMS
per phase (1.94 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth (see fig. 1)
V
CE(on)
(typical)
at I
C
= 6.0 A, 25 °C
6.7 A
RMS
125 °C
360 Vdc
0.8
115 %
1.72 V
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
SYMBOL
V
CES
I
C
T
C
= 25 °C
T
C
= 100 °C
Repetitive rating; V
GE
= 20 V, pulse width
limited by maximum junction temperature
See fig. 20
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 µH, R
G
= 22
Ω
See fig. 19
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
11
6.0
22
UNITS
V
A
Pulsed collector current
I
CM
A
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and
storage temperature range
Soldering temperature
Mounting torque
I
LM
I
F
I
FM
t
SC
V
GE
V
ISOL
P
D
T
J
, T
Stg
22
6.1
22
10
± 20
A
A
A
µs
V
V
RMS
W
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
2500
36
14
- 40 to + 150
°C
lbf
in
(N
m)
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
300
5 to 7
(0.55 to 0.8)
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1

CPV363M4KPBF Related Products

CPV363M4KPBF CPV363M4FPBF CPV364M4KPBF
Description igbt transistor 600 volt 6.0 amp igbt transistor 600 volt 8.7 amp igbt transistor 600 volt 13 amp
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Vishay Vishay Vishay
package instruction ROHS COMPLIANT, IMS-2, SIP-13 FLANGE MOUNT, R-PSFM-T13 IN-LINE, R-PSIP-T13
Contacts 13 13 13
Reach Compliance Code unknow compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT ULTRA FAST SOFT RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 11 A 16 A 24 A
Collector-emitter maximum voltage 600 V 600 V 600 V
Configuration COMPLEX BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE COMPLEX
Gate-emitter maximum voltage 20 V 20 V 20 V
JESD-30 code R-XSFM-T13 R-PSFM-T13 R-PSIP-T13
Number of components 6 6 6
Number of terminals 13 13 13
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 36 W 36 W 63 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON
Nominal off time (toff) 405 ns 690 ns 400 ns
Nominal on time (ton) 78 ns 53 ns 77 ns
VCEsat-Max 2.1 V 1.5 V 2.3 V
Factory Lead Time - 11 weeks 20 weeks 1 day
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