CPV363M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed over 5.0 kHz (see fig. 1 for current vs.
frequency curve), and short circuit rated to 10 µs
at 125 °C, V
GE
= 15 V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Totally lead (Pb)-free
RoHS
COMPLIANT
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I
RMS
per phase (1.94 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth (see fig. 1)
V
CE(on)
(typical)
at I
C
= 6.0 A, 25 °C
6.7 A
RMS
125 °C
360 Vdc
0.8
115 %
1.72 V
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
SYMBOL
V
CES
I
C
T
C
= 25 °C
T
C
= 100 °C
Repetitive rating; V
GE
= 20 V, pulse width
limited by maximum junction temperature
See fig. 20
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 µH, R
G
= 22
Ω
See fig. 19
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
11
6.0
22
UNITS
V
A
Pulsed collector current
I
CM
A
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and
storage temperature range
Soldering temperature
Mounting torque
I
LM
I
F
I
FM
t
SC
V
GE
V
ISOL
P
D
T
J
, T
Stg
22
6.1
22
10
± 20
A
A
A
µs
V
V
RMS
W
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
2500
36
14
- 40 to + 150
°C
lbf
⋅
in
(N
⋅
m)
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
300
5 to 7
(0.55 to 0.8)
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
CPV363M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
SYMBOL
R
thJC
(IGBT)
R
thJC
(DIODE)
R
thCS
(MODULE)
TYP.
-
-
0.10
20
Weight of module
0.7
-
oz.
MAX.
3.5
5.5
-
-
g
°C/W
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE in conduction
Case to sink, flat, greased surface
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Temperature coeff. of breakdown voltage
SYMBOL
V
(BR)CES (1)
ΔV
(BR)CES
/ΔT
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 µA
V
GE
= 0 V, I
C
= 1.0 mA
I
C
= 6.0 A
Collector to emitter saturation voltage
V
CE(on)
I
C
= 11 A
I
C
= 6.0 A, T
J
= 150 °C
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
V
GE(th)
ΔV
GE(th)
/ΔT
J
g
fe (2)
I
CES
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 100 V, I
C
= 12 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
Diode forward voltage drop
Gate to emitter leakage current
Notes
(1)
Pulse width
≤
80 µs, duty factor
≤
0.1 %
(2)
Pulse width 5.0 µs; single shot
V
FM
I
GES
I
C
= 12 A
I
C
= 12 A, T
J
= 150 °C
V
GE
= ± 20 V
See fig. 13
-
-
1.3
-
1.6
± 100
nA
V
GE
= 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
3.0
-
3.0
-
-
-
TYP.
-
0.45
1.72
2.00
1.60
-
- 13
6.0
-
-
1.4
MAX.
-
-
2.10
-
-
6.0
-
-
250
µA
2500
1.7
V
mV/°C
S
V
UNITS
V
V/°C
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94485
Revision: 01-Sep-08
CPV363M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Short circuit withstand time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
SC
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
V
CC
= 360 V, T
J
= 125 °C
V
GE
= 15 V, R
G
= 23
Ω,
V
CPK
< 500 V
T
J
= 150 °C
I
C
= 6.0 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Ω
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
See fig. 17
-
120
-
See fig. 16
See fig. 15
T
J
= 25 °C
I
C
= 6.0 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
I
C
= 6 A
V
CC
= 400 V
See fig. 8
TEST CONDITIONS
Vishay High Power Products
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
MIN.
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
See fig. 7
-
-
-
See fig. 14
-
-
I
F
= 12 A
V
R
= 200 V
dI/dt = 200 A/µs
-
-
-
-
80
3.5
5.6
80
220
180
120
6.0
A
10
180
nC
600
-
A/µs
TYP.
61
7.4
27
55
24
107
92
0.28
0.10
0.39
-
54
24
161
244
0.60
740
100
9.3
42
MAX.
91
11
40
-
-
ns
160
140
-
-
0.50
-
-
-
ns
-
-
-
-
-
-
60
ns
pF
mJ
µs
mJ
nC
UNITS
Diode peak reverse recovery current
I
rr
Diode reverse recovery charge
Diode peak rate of fall of recovery
during t
b
Q
rr
dI
(rec)M
/dt
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
CPV363M4KPbF
Vishay High Power Products
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
3.50
12
10
8
2.33
6
1.75
4
1.17
2
0.58
0
0.1
0.00
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
100
12
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
T
J
= 150
o
C
10
Maximum DC Collector Current (A)
9
6
1
3
0.1
V
GE
= 15V
20μs PULSE WIDTH
1
10
0
25
50
75
100
125
150
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
T
C
, Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
3.0
V
CE
, Collector-to-Emitter Voltage(V)
I
C
, Collector-to-Emitter Current (A)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 12A
T
J
= 150 C
10
o
2.0
T
J
= 25 C
1
o
I
C
=
I
C
=
Total Output Power (kW)
V
GE
= 15V
6A
3A
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
2.92
0.1
5
10
V
CC
= 50V
5μs PULSE WIDTH
15
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
GE
, Gate-to-Emitter Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94485
Revision: 01-Sep-08
CPV363M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
10
Vishay High Power Products
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
P
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
2
DM
t
1
t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
1500
1200
900
Cies
Total Switching Losses (mJ)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
1.0
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.8
I
C
= 6.0A
C, Capacitance (pF)
0.6
600
0.4
300
Coes
Cres
0.2
0
1
10
0.0
0
10
20
30
40
50
V
CE
, Collector-to-Emitter Voltage (V)
R
R
, Gate Resistance (Ω)
G
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
V
GE
, Gate-to-Emitter Voltage (V)
V
CC
= 400V
I
C
= 6.0A
10
R
G
=
10Ω
23
Ω
V
GE
= 15V
V
CC
= 480V
12
Total Switching Losses (mJ)
16
I
C
= 12 A
1
8
I
C
= 6 A
4
I
C
= 3 A
0
0
20
40
60
80
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Q
G
, Total Gate Charge (nC)
T
J
, Junction Temperature (
°
C )
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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