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BC807-40W-AU_R2_000A1

Description
Small Signal Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC807-40W-AU_R2_000A1 Overview

Small Signal Field-Effect Transistor

BC807-40W-AU_R2_000A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instruction,
Reach Compliance Codecompli
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

BC807-40W-AU_R2_000A1 Preview

Download Datasheet
BC807-16W-AU SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current I
C
= 500mA
• Acqire quality system certificate : TS16949
• Manufactured in accordance with AECQ101
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.087(2.20)
0.070(1.80)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.078(2.00)
45 Volts
POWER
300 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0001 ounce, 0.005 gram
• Device Marking : BC807-16W-AU : 7S
BC807-25W-AU : 7V
BC807-40W-AU : 7W
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
MECHANICAL DATA
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation (Note 1)
Junction and Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
-45
-50
-5.0
-500
300
-55 to 150
UNIT
V
V
V
mA
mW
o
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient (Note 1)
SYMBOL
R
θJA
Value
420
UNIT
o
C/W
Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions.
March 22,2011-REV.04
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