29F016-90 datasheet, PDF - EEWORLD Datasheet

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29F016-90: Description16m-bit [2M X 8] cmos equal sector flash memory; File Size868KB，37 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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29F016-90 Overview

16m-bit [2M X 8] cmos equal sector flash memory

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MX29F016

16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY

FEATURES

• Single power supply 5V operation for read, erase and

program

• Fast access time: 90/120ns

• Low power consumption

- 30mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase:32 equal sector with of 64KByte each

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

• Group Sector protect/unprotect for 5V/12V system.

• Group Sector protection

- Hardware sector protect/unprotect method for each

group which consists of two adjacent sectors

- Temporary group sector unprotect allows code

changes in previously locked sectors

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- 40-pin TSOP, 44-pin SOP, 48-pin TSOP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

GENERAL DESCRIPTION

The MX29F016 is a 16-mega bit Flash memory organized

as 2M bytes of 8 bits. MXIC's Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX29F016 is packaged in

40-pin TSOP or 44-pin SOP, 48-pin TSOP. It is designed

to be reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29F016 offers access time as fast as

90ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F016 has separate chip enable (CE) and output

enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F016 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

The MX29F016 uses a 5.0V±10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to

100 milliamps on address and data pin from -1V to

VCC + 1V.

P/N:PM0590

REV. 1.4, NOV. 21, 2002

29F016-90 Related Products

	29F016-90	29F016-12
Description	16m-bit [2M X 8] cmos equal sector flash memory	16m-bit [2M X 8] cmos equal sector flash memory

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