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2SD2012

Description
npn triple diffused type (audio frequency power amplifier applications)
CategoryDiscrete semiconductor    The transistor   
File Size165KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SD2012 Overview

npn triple diffused type (audio frequency power amplifier applications)

2SD2012 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-67
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment25 W
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max1 V
Base Number Matches1
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