MUR10040CT thru MUR10060CTR
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 to 600 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 400 V - 600 V
I
F(AV)
= 100 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MUR10040CT(R)
400
280
400
-55 to 150
-55 to 150
MUR10060CT(R)
600
420
600
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated
DC blocking voltage (per leg)
Maximum reverse recovery time
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 140 °C
t
p
= 8.3 ms, half sine
I
FM
= 50 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MUR10040CT(R)
100
1500
1.3
25
3
90
MUR10060CT(R)
100
1500
1.7
25
3
110
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
1.0
1.0
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MUR10040CT thru MUR10060CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
Microchip MCU
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