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K8S1215EBC-FC1DT

Description
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,
Categorystorage    storage   
File Size667KB,83 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K8S1215EBC-FC1DT Overview

EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,

K8S1215EBC-FC1DT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1124627755
package instructionFBGA, BGA64,10X14,20
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time95 ns
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B64
memory density536870912 bit
Memory IC TypeEEPROM CARD
memory width16
Humidity sensitivity level1
Number of departments/size4,511
Number of terminals64
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA64,10X14,20
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply1.8 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Department size16K,64K
Maximum standby current0.00003 A
Maximum slew rate0.07 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE
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