Q62702-X105 datasheet, PDF - EEWORLD Datasheet

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Q62702-X105: DescriptionSilicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter); File Size21KB，2 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Q62702-X105 Overview

Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)

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Silicon PIN Diodes

High-speed switching

Phase shifting up to 10 GHz

Power splitter

BXY 43

Type

BXY 43A

BXY 43B

BXY 43C

Marking

–

Ordering Code

Q62702-X116

Q62702-X104

Q62702-X105

Pin Configuration

Cathode: black dot,

Package

Maximum Ratings

Parameter

Breakdown voltage

Forward current

Peak forward current,

Total power dissipation

Junction temperature

Storage temperature range

Operating temperature range

Thermal Resistance

Junction - case

th JC

K/W

Symbol

BXY 43A

(BR)

FRM

tot

stg

150

400

500

175

– 55 … + 150

Values

BXY 43B

150

500

600

BXY 43C

150

500

600

˚C

Unit

For detailed information see chapter Package Outlines.

Semiconductor Group

Q62702-X105 Related Products

	Q62702-X105	BXY43B	BXY43A	BXY43C	Q62702-X116
Description	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)
Is it Rohs certified?	-	incompatible	incompatible	incompatible	-
Maker	-	SIEMENS	SIEMENS	SIEMENS	-
package instruction	-	O-CAMW-F2	O-CAMW-F2	O-CAMW-F2	-
Reach Compliance Code	-	unknown	unknown	unknown	-
ECCN code	-	EAR99	EAR99	EAR99	-
application	-	SWITCHING	SWITCHING	SWITCHING	-
Minimum breakdown voltage	-	150 V	150 V	150 V	-
Configuration	-	SINGLE	SINGLE	SINGLE	-
Maximum diode capacitance	-	0.18 pF	0.1 pF	0.3 pF	-
Nominal diode capacitance	-	0.18 pF	0.1 pF	0.3 pF	-
Diode component materials	-	SILICON	SILICON	SILICON	-
Diode type	-	PIN DIODE	PIN DIODE	PIN DIODE	-
JESD-30 code	-	O-CAMW-F2	O-CAMW-F2	O-CAMW-F2	-
JESD-609 code	-	e0	e0	e0	-
Minority carrier nominal lifetime	-	0.35 µs	0.25 µs	0.35 µs	-
Number of components	-	1	1	1	-
Number of terminals	-	2	2	2	-
Maximum operating temperature	-	175 °C	175 °C	175 °C	-
Package body material	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-
Package shape	-	ROUND	ROUND	ROUND	-
Package form	-	MICROWAVE	MICROWAVE	MICROWAVE	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	-
surface mount	-	YES	YES	YES	-
technology	-	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	-
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	-	FLAT	FLAT	FLAT	-
Terminal location	-	AXIAL	AXIAL	AXIAL	-
Base Number Matches	-	1	1	1	-

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