MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
ITO-220AB
D
2
PAK (TO-263AB)
FEATURES
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
K
2
2
3
1
MBRB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
MBRF20xxCT
PIN 1
PIN 3
PIN 2
TYPICAL APPLICATIONS
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case:
ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Circuit configuration
2 x 10 A
35 V, 45 V, 60 V
150 A
0.57 V, 0.70 V
150 °C
ITO-220AB, D
2
PAK (TO-263AB)
Common cathode
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 135 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
T
STG
V
AC
1.0
10 000
-65 to +150
-65 to +175
1500
MBRB2035CT
35
35
35
MBRB2045CT
45
45
45
20
10
150
0.5
V/μs
°C
V
A
MBRB2060CT
60
60
60
V
UNIT
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode at t
p
= 2.0 μs,
1 kHz
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Revision: 13-Jun-2018
Document Number: 88674
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
MBRB2035CT,
MBRB2045CT
0.65
0.57
0.84
0.72
0.1
15
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 10 A
Maximum instantaneous
forward voltage per diode
V
F (1)
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
Maximum reverse current at
DC blocking voltage per diode
I
R (2)
Rated V
R
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
MBRB2060CT
0.80
0.70
0.95
0.85
0.15
150
mA
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical resistance from junction to case per diode
SYMBOL
R
JC
MBRF
5.0
MBRB
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
MBRF2045CT-E3/45
MBRB2045CT-E3/45
MBRB2045CT-E3/81
MBRF2045CTHE3/45
1)
MBRB2045CTHE3_A/P
(1)(2)
MBRB2045CTHE3_A/I
(1)(2)
UNIT WEIGHT (g)
1.99
1.35
1.35
1.99
1.35
1.35
PACKAGE CODE
45
45
81
45
P
I
BASE QUANTITY
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Notes
(1)
AEC-Q101 qualified
(2)
35 V device available in AEC-Q101 qualified
D
2
PAK (TO-263AB)
only
Revision: 13-Jun-2018
Document Number: 88674
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
20
100
Instantaneous Reverse Current (mA)
Resistive or Inductive Load
MBRB2035CT, MBRB2045CT
MBRB2060CT
10
T
J
= 125 °C
Average Forward Current (A)
16
12
1
8
0.1
T
J
= 75 °C
4
0.01
T
J
= 25 °C
0
0
50
100
150
0.001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
160
10 000
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward Surge Current (A)
120
100
Junction Capacitance (pF)
140
1000
80
60
MBRB2035CT, MBRB2045CT
MBRB2060CT
100
1
10
100
0.1
1
10
100
40
Number
of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
T
J
= 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
1.0
T
J
= 25 °C
1
0.1
MBRB2035CT, MBRB2045CT
MBRB2060CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Jun-2018
Document Number: 88674
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
Vishay General Semiconductor
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
2
3
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 13-Jun-2018
Document Number: 88674
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000