K4M56323PG-HF90 datasheet, PDF

K4M56323PG-HF90: DescriptionSynchronous DRAM, 8MX32, 7ns, CMOS, PBGA90; Categorystorage storage; File Size145KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4M56323PG-HF90 Overview

Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1122315469
package instruction	FBGA, BGA90,9X15,32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	7 ns
Maximum clock frequency (fCLK)	111 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e3
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Humidity sensitivity level	1
Number of terminals	90
word count	8388608 words
character code	8000000
Maximum operating temperature	70 °C
Minimum operating temperature	-25 °C
organize	8MX32
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0003 A
Maximum slew rate	0.14 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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