DNA30E2200PA
High Voltage Standard Rectifier
V
RRM
I
FAV
V
F
=
=
=
2200 V
30 A
1.24 V
Single Diode
Part number
DNA30E2200PA
Backside: anode
1
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
© 2013 IXYS all rights reserved
DNA30E2200PA
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.83
13.4
0.7
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
7
210
370
400
315
340
685
665
495
480
V
mΩ
K/W
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
2300
2200
40
1.5
1.26
1.53
1.24
1.63
30
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 2200 V
V
R
= 2200 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 140°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
junction capacitance
V
R
= 700 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
© 2013 IXYS all rights reserved
DNA30E2200PA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
2
0.4
20
0.6
60
Product Marking
Part number
D
N
A
30
E
2200
PA
=
=
=
=
=
=
=
Diode
High Voltage Standard Rectifier
(>= 2000V)
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-220AC (2)
Part Number
Logo
Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Ordering
Standard
Part Number
DNA30E2200PA
Marking on Product
DNA30E2200PA
Delivery Mode
Tube
Quantity
50
Code No.
507762
Similar Part
DNA30E2200PZ
DNA30EM2200PZ
DNA30E2200FE
DNA30E2200IY
Package
TO-263AB (D2Pak) (2HV)
TO-263AB (D2Pak) (2HV)
i4-Pac (2HV)
TO-262 (2HV) (I2PAK)
Voltage class
2200
2200
2200
2200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.83
10.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
© 2013 IXYS all rights reserved
DNA30E2200PA
Outlines TO-220
A
Q
E
ØP
A1
Dim.
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
5.08
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.200
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
4
1
3
2x b2
L1
2x b
e
L
D
H1
C
A2
ØP
Q
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
© 2013 IXYS all rights reserved
DNA30E2200PA
Rectifier
60
300
10
3
V
R
= 0 V
T
VJ
= 45°C
40
250
I
F
[A]
20
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
0
0.5
1.0
1.5
2.0
I
FSM
[A]
200
T
VJ
= 150°C
T
VJ
= 45°C
It
[A s]
2
2
T
VJ
= 150°C
50 Hz, 80% V
RRM
150
0.001
10
2
0.01
0.1
1
1
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
50
t [s]
Fig. 2 Surge overload current
t [ms]
2
Fig. 3 I t versus time per diode
40
R
thKA
=
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
40
30
P
tot
20
dc =
1
0.5
0.4
0.33
0.17
0.08
30
I
F(AV)M
20
[A]
10
[W]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
30
0
25
50
75 100 125 150 175 200
0
0
25 50 75 100 125 150 175 200
I
F(AV)M
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current versus
case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
0.8
0.6
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
0.0003
0.0065
0.027
0.105
0.8
Z
thJC
0.4
1 0.03
2 0.072
3 0.131
4 0.367
5 0.1
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123c
© 2013 IXYS all rights reserved
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