V826632K24SAEW-B1 datasheet, PDF

V826632K24SAEW-B1: DescriptionDDR DRAM Module, 32MX64, 0.75ns, CMOS, PDMA184; Categorystorage storage; File Size203KB，15 Pages; ManufacturerProMOS Technologies Inc

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V826632K24SAEW-B1 Overview

DDR DRAM Module, 32MX64, 0.75ns, CMOS, PDMA184

Parameter Name	Attribute value
Objectid	1125506367
package instruction	DIMM, DIMM184
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.75 ns
Maximum clock frequency (fCLK)	143 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N184
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	184
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	2.4 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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