K6F1616R6B-EF70 datasheet, PDF

K6F1616R6B-EF70: DescriptionStandard SRAM, 1MX16, 70ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48; Categorystorage storage; File Size131KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6F1616R6B-EF70 Overview

Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1125528680
package instruction	VFBGA, BGA48,6X8,30
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	S-PBGA-B48
JESD-609 code	e0
length	7 mm
memory density	16777216 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	SQUARE
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Minimum standby current	1 V
Maximum slew rate	0.022 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	7 mm

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