S8050-H datasheet, PDF - EEWORLD Datasheet

S8050-H: File Size317KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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S8050-H Parametric

Parameter Name	Attribute value
Transistor type	NPN
Collector-emitter breakdown voltage (Vceo)	25V
Collector current (Ic)	500mA
Power(Pd)	300mW
Collector cut-off current (Icbo)	100nA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)	600mV@500mA,50mA
DC current gain (hFE@Ic,Vce)	200@50mA,1V
Characteristic frequency (fT)	150MHz
Operating temperature	+150℃@(Tj)

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