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1N4448WT A

CategorySwitching diode   
File Size1MB,3 Pages
ManufacturerCHINA BASE INTERNATIONAL
Download Datasheet Parametric View All

1N4448WT A Parametric

Parameter NameAttribute value
Diode configurationDetached
power150mW
DC reverse withstand voltage (Vr)80V
Average rectified current (Io)125mA
Forward voltage drop (Vf)1.25V@150mA
Reverse current (Ir)100nA@80V
Reverse recovery time (trr)4ns
Operating temperature+150℃@(Tj)
 
 
Silicon Epitaxial Planar Switching Diode
Fast Switching Diode
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
 
 
A
2
 
 
 
 
 
Top View
Marking Code: "A"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
P
d
T
j
T
stg
Value
100
80
125
250
0.5
150
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 5 mA
at I
F
= 10 mA
at I
F
= 100 mA
at I
F
= 150 mA
Reverse Leakage Current
at V
R
= 80 V
at V
R
= 20 V
at V
R
= 75 V, T
J
= 150
O
C
at V
R
= 25 V, T
J
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
Capacitance
at V
R
= 0.5 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 0.1 X I
R
, R
L
= 100
 
 
 
 
 
 
Symbol
Min.
0.62
-
-
-
-
-
-
-
80
 
-
-
Max.
Unit
 
V
F
0.72
0.855
1
1.25
100
25
50
30
-
 
 
V
 
I
R
nA
nA
µA
µA
V
 
pF
ns
 
V
(BR)R
C
tot
t
rr
 
 
 
 
4
4
1 of 3
Copyright
©
All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
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