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CY7C1576KV18-550BZC

Description
72-Mbit QDR-II SRAM 4-Word Burst Architecture
File Size542KB,30 Pages
ManufacturerCypress Semiconductor
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CY7C1576KV18-550BZC Overview

72-Mbit QDR-II SRAM 4-Word Burst Architecture

CY7C1565KV18
72-Mbit QDR
®
II+ SRAM Four-Word
Burst Architecture (2.5 Cycle Read Latency)
72-QDR
®
II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
Features
Configurations
With Read Cycle Latency of 2.5 cycles
CY7C1565KV18: 2M × 36
Separate independent read and write data ports
Supports concurrent transactions
550-MHz clock for high bandwidth
Four-word burst for reducing address bus frequency
Double data rate (DDR) Interfaces on both read and write ports
(data transferred at 1100 MHz) at 550 MHz
Available in 2.5-clock cycle latency
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Data valid pin (QVLD) to indicate valid data on the output
Single multiplexed address input bus latches address inputs
for read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
Quad data rate (QDR
®
) II+ operates with 2.5-cycle read latency
when DOFF is asserted HIGH
Operates similar to QDR I device with one cycle read latency
when DOFF is asserted LOW
Available in × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V± 0.1 V; I/O V
DDQ
= 1.4 V to V
DD [1]
Supports both 1.5 V and 1.8 V I/O supply
High-speed transceiver logic (HSTL) inputs and variable drive
HSTL output buffers
Available in 165-ball fine pitch ball grid array (FBGA) package
(13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Phase-locked loop (PLL) for accurate data placement
Functional Description
The CY7C1565KV18 is1.8-V synchronous pipelined SRAM,
equipped with QDR II+ architecture. Similar to QDR II
architecture, QDR II+ architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II+ architecture has separate data inputs and
data outputs to completely eliminate the need to “turnaround” the
data bus that exists with common I/O devices. Each port is
accessed through a common address bus. Addresses for read
and write addresses are latched on alternate rising edges of the
input (K) clock. Accesses to the QDR II+ read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with four 36-bit
words (CY7C1565KV18) that burst sequentially into or out of the
device. Because data is transferred into and out of the device on
every rising edge of both input clocks (K and K), memory
bandwidth is maximized while simplifying system design by
eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
× 36
550 MHz
550
1310
500 MHz
500
1210
450 MHz
450
1100
400 MHz
400
1000
Unit
MHz
mA
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V
DDQ
= 1.4 V to V
DD
.
Cypress Semiconductor Corporation
Document Number: 001-15878 Rev. *S
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 30, 2017

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