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MOS62-1-20THZ

Description
Oscillator, 1MHz Min, 175MHz Max, 1MHz Nom, CMOS
CategoryPassive components    oscillator   
File Size104KB,1 Pages
ManufacturerMicrocom Devices Ltd.
Download Datasheet Parametric View All

MOS62-1-20THZ Overview

Oscillator, 1MHz Min, 175MHz Max, 1MHz Nom, CMOS

MOS62-1-20THZ Parametric

Parameter NameAttribute value
Objectid107598692
package instructionDILCC4,.15,200
Reach Compliance Codeunknown
Installation featuresSURFACE MOUNT
Number of terminals4
Maximum operating frequency175 MHz
Minimum operating frequency1 MHz
Nominal operating frequency1 MHz
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialCERAMIC
Encapsulate equivalent codeDILCC4,.15,200
power supply2.5 V
Certification statusNot Qualified
Maximum slew rate20 mA
Nominal supply voltage2.5 V
surface mountYES
technologyCMOS
MDL
Microcom
Devices Ltd.
MOS Series
FEATURES
Miniature Surface Mount Crystal Oscillators
.
Low-Profile Ceramic SMD (3 sizes)
.
Wide Frequency & Temperature. Range
.
Low Power/ Tri-State Option
Phone: 403-686-1889 Fax: 403-686-1604
www.microcomdevices.com
SPECIFICATIONS
(subject to change w/o notice)
Parameters
Frequency Range
Operating Temp.
Storage Temp.
Supply Voltage
Supply Current (max)
5V
1.000MHz ~ 125.000MHz
0°C ~ +70°C to -40°C ~ +85°C
-55°C ~ +125°C
V
DD
: 5V
±
10%
25mA over 1MHz ~ 35MHz
40mA over 36MHz ~ 60MHz
60mA over 61MHz ~ 125MHz
±20
~ 100ppm (includes 25°C tolerance & changes
due to temperature, supply, load, vibrations, etc.)
10TTL/50pF HCMOS for 1 ~ 70Hz
10 TTL/15pF HCMOS for 71 ~ 125MHz
V
OL
= 0.4V/10% of V
DD
max, TTL/HCMOS load
V
OH
= 2.4V/ 90% of V
DD
min, TTL/HCMOS load
40/60% ~ 45/55%
2ns @ 100MHZ ~10ns @ 1MHz
10 ms
NC or V
IH
of 2.0V or higher enables O/P
V
IL
of 0.7V or lower disables O/P, high impedance
±100ps
absolute; 25ps one-sigma
MOS
4
Marking
Markin
1
7.0±0.2
1.7
1.2
1
4
1.4
3.7
5.08
2
3
2.6
2.0
1.8
2.50
PADS
LAYOUT
4.50
1.5
1
4
2
3
1.8
2
3
4
5.0±0.2
1
6.0±0.2
Marking
Markin
3.3V (3V, 2.5V, 1.8V)
1.000MHz ~ 175.000MHz
0°C ~ +70°C to -40°C ~ +85°C
-55°C ~ +125°C
V
DD
: 3.3V (3V, 2.5V, 1.8V)
±
10%
20mA over 1MHz ~ 50MHz
35mA over 51MHz ~ 90MHz
50mA over 91MHz ~ 175MHz
±20
~ 100ppm (includes 25°C tolerance & changes
due to temperature, supply, load, vibrations, etc.)
15pF HCMOS
V
OL
= 10% of V
DD
max, HCMOS load
V
OH
= 90% of V
DD
min, HCMOS load
40/60% ~ 45/55%
2ns @ 100MHZ ~10ns @ 1MHz
10 ms
NC or V
IH
of 2.0V or higher enables O/P
V
IL
of 0.7V or lower disables O/P, high impedance
±100ps
absolute; 25ps one-sigma
MOS6
3
2
Frequency Stability
Output Load (max)
Output Level
Duty Cycle
Rise/Fall Time (max)
Start-up Time (max)
Tri-State (100ns max
E/D Time) I/P
Period Jitter (max)
OUTLINE
(mm) not to scale
MOS5
5.0±0.2
3.5
±0.2
4
Markin
Marking
1
3
2
3.2
±0.2
1.7max
1.0max
1.0
1.2
1 2
4 3
1.60
1.00
1.30
1.4
PADS
PAYOUT
2.30
PADS
LAYOUT
2.60
Connections:
1 - NC/OE; 2 – GND; 3 – O/P; 4 – V
DD
PART NUMBERING
Model
MOS
MOS6
MOS5
Supply
Frequency Stability Temperature
±PPM
Value
Duty Cycle
Output
Tri-State
Packaging
5: 5V MHz
3.3: 3.3V Value
3: 3V
2: 2.5V
1: 1.8V
Blank: 0C ~ +70C Blank: 40/60 Blank: CMOS/TTL Blank: NC Blank: Bulk
45/55 H:
HCMOS
M: -20C ~ +70C T:
Z: Tri-State R: Tape & Reel
N: -30C ~ +75C
I:
-40C ~ +85C
Please Consult Microcom Devices Ltd. for Custom Specifications
Example: MOS3-16.384-50IT

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