|
FDU6612A |
FDD6612A |
Description |
9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
Is it Rohs certified? |
conform to |
conform to |
Parts packaging code |
TO-251AA |
DPAK |
package instruction |
IPAK-3 |
DPAK-3 |
Contacts |
3 |
3 |
Reach Compliance Code |
_compli |
_compli |
ECCN code |
EAR99 |
EAR99 |
Avalanche Energy Efficiency Rating (Eas) |
90 mJ |
90 mJ |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
30 V |
30 V |
Maximum drain current (Abs) (ID) |
30 A |
30 A |
Maximum drain current (ID) |
9.5 A |
9.5 A |
Maximum drain-source on-resistance |
0.02 Ω |
0.02 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-251AA |
TO-252 |
JESD-30 code |
R-PSIP-T3 |
R-PSSO-G2 |
JESD-609 code |
e3 |
e3 |
Number of components |
1 |
1 |
Number of terminals |
3 |
2 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
175 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
NOT APPLICABLE |
260 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
36 W |
36 W |
Maximum pulsed drain current (IDM) |
60 A |
60 A |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
NO |
YES |
Terminal surface |
Matte Tin (Sn) |
Matte Tin (Sn) |
Terminal form |
THROUGH-HOLE |
GULL WING |
Terminal location |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
NOT APPLICABLE |
NOT SPECIFIED |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |