FDD6612A datasheet, PDF - EEWORLD Datasheet

FDD6612A: Description9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252; CategoryDiscrete semiconductor The transistor; File Size119KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	DPAK
package instruction	DPAK-3
Contacts	3
Manufacturer packaging code	TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	90 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	9.5 A
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	36 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	FDD6612A	FDU6612A
Description	9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252	9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Is it Rohs certified?	conform to	conform to
Parts packaging code	DPAK	TO-251AA
package instruction	DPAK-3	IPAK-3
Contacts	3	3
Reach Compliance Code	_compli	_compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	90 mJ	90 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	30 A	30 A
Maximum drain current (ID)	9.5 A	9.5 A
Maximum drain-source on-resistance	0.02 Ω	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	NOT APPLICABLE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	36 W	36 W
Maximum pulsed drain current (IDM)	60 A	60 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT APPLICABLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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