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2SC5004-FB

Description
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size193KB,8 Pages
ManufacturerNEC Electronics
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2SC5004-FB Overview

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

2SC5004-FB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.06 A
Collector-based maximum capacity1.2 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz
VCEsat-Max0.5 V
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