The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomor-
phic High Electron Mobility Transistor (pHEMT). It features a 0.25μmx1500μm
Schottky barrier gate, defined by high-resolution stepper-based photolithography.
The double recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure is designed for improved linearity over a range of bias condi-
tions and input power levels.
Features
30dBm Output Power (P1dB)
13dB Small-Signal Gain
(SSG)
1.3dB Noise Figure
45dBm O
IP3
45% Power-Added Efficiency
FPD3000SOT89CE: RoHS
Compliant (Directive
2002/95/EC)
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
Drivers or Output Stages in
PCS/Cellular Base Station
Transmitter Amplifiers
High Intercept-point LNAs
WLL, WLAN, and Other Types
of Wireless Infrastructure
Systems
Parameter
P
1dB
Gain Compression
Small-Signal Gain (SSG)
PAE
Noise Figure (NF)
Min.
29
11.5
Specification
Typ.
30
13
45
1.3
0.9
Max.
Unit
dBm
dB
%
dB
dB
dBm
mA
Condition
V
DS
=5V, I
DS
=50% I
DSS
V
DS
=5V, I
DS
=50% I
DSS
V
DS
=5V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=5V, I
DS
=50% I
DSS
; V
DS
=5V, I
DS
=25% I
DSS
V
DS
=5V, I
DS
=25% I
DSS
. Matched for optimal
power.
Matched for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≅+1V
V
DS
=1.3V, V
GS
=0V
V
GS
=-5V
V
DS
=1.3V, I
DS
=3mA
I
GS
=3mA
I
DS
=3mA
OIP
3
(15dB to 5dB below P
1dB
)
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance (GM)
Gate-Source Leakage Current (IGSO)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
|0.7|
|12|
|12|
750
42
45
930
1.5
800
2
|1.0
|16|
|16|
20
|1.3|
1100
mA
mA
ms
μA
V
V
V
Thermal Resistivity (θJC) *
35
°C/W
*Note: T
AMBIENT
=22°C, RF specifications measured at f=1850GHz using CW signal (except as noted).
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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Microcontroller MCU
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