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JANTX1N5537-1

Description
Zener Diode, 17V V(Z), 20%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size192KB,2 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

JANTX1N5537-1 Overview

Zener Diode, 17V V(Z), 20%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED PACKAGE-2

JANTX1N5537-1 Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
Parts packaging codeDO-35
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-PALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
GuidelineMIL-19500/437
Nominal reference voltage17 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance20%
Working test current0.001 mA
Base Number Matches1
Low Noise Zener Diode Series
1N5518B-1 thru 1N5546B-1
Features
1N5518-1 THRU 1N5546B-1 Available in JAN, JANTX
and JANTXV PER MIL-PRF-19500/437
Low Reverse Leakage Characteristics
Low Noise Cheracteristics
Double Plug Construction
Metallurgically Bonded
Also available in DO-213 MELF style package.
Maximum Ratings
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
JEDEC
TYPE
Number
(Note1)
Volts
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
1N5533B
1N5534B
1N5535B
1N5536B
1N5537B
1N5538B
1N5539B
1N5540B
1N5541B
1N5542B
1N5543B
1N5544B
1N5545B
1N5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
mA
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Ohms
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
μ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Normal
Zener
Voltage
Vz @ IZT
Zener
Test
Current
IZT
Maximum Zener
Impedance
B-C-D Suffix
ZZT @ IZT
IR
VR = Volts
NON &
A- Suffix
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
B-C-D-
Suffix
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
0.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
Maximum Reverse
Leakage Current
B-C-D Suffix
Maximum DC
Zener Current
IZM
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
B-C-D Suff
Maximum Noise
Density
@IZ=250
μA
ND
μV
/
√Hz
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
Regulation
Factor
ΔV
Z
(Note 2)
Low VZ
Current
IZL
mAdc
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Volts
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
NOTE1:
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units with “A” suffix are +10% with guaranteed limits for
VZ, lR, and VF. Units with guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and
“D” suffix for +1.0%.
Delta VZ is the maximum difference between VZ @ IZT and VZ@ IZL measured with the device junction in thermal equilibrium.
NOTE 2:
1
Revision Date: 2/28/2013

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