IBM11N4735BB-70J datasheet, PDF

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IBM11N4735BB-70J: DescriptionEDO DRAM Module, 4MX72, 70ns, CMOS, DIMM-168; Categorystorage storage; File Size338KB，30 Pages; ManufacturerIBM; Websitehttp://www.ibm.com

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IBM11N4735BB-70J Overview

EDO DRAM Module, 4MX72, 70ns, CMOS, DIMM-168

IBM11N4735BB-70J Parametric

Parameter Name	Attribute value
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	FAST PAGE WITH EDO
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	36
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	301989888 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	25.4 mm
self refresh	NO
Maximum standby current	0.018 A
Maximum slew rate	1.35 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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IBM11M4730C4M x 72 E12/10, 5.0V, Au.

IBM11N4735BB IBM11N4645BB

IBM11N4735CB IBM11N4645CB

4M x 64/72 DRAM MODULE

Features

• 168 Pin JEDEC Standard, Unbuffered 8 Byte

Dual In-line Memory Module

• 4Mx64, 4Mx72 Extended Data Out Page Mode

DIMM

• Performance:

-60

RAC

CAC

HPC

RAS Access Time

CAS Access Time

Access Time From Address

Cycle Time

EDO Mode Cycle Time

60ns

15ns

30ns

104ns

25ns

-70

70ns

20ns

35ns

124ns

30ns

• System Performance Beneﬁts:

-Non buffered for increased performance

-Reduced noise (35 V

pins)

-Byte write, byte read accesses

-Serial PDs

• Extended Data Out (EDO) Mode, Read-Modify-

Write Cycles

• Refresh Modes: RAS-Only, CBR and Hidden

Refresh

• 2048 refresh cycles distributed across 32ms

(11/11 addressing)

• 4096 refresh cycles distributed across 64ms

(12/10 addressing)

• 11/11 or 12/10 addressing (Row/Column)

• Card size: 5.25" x 1.0" x 0.354"

• DRAMS in SOJ Package

• All inputs and outputs are LVTTL (3.3V) compat-

ible

• Single 3.3V

0.3V Power Supply

• Au contacts

• Optimized for byte-write non-parity, or ECC

applications

Description

IBM11N4645BB IBM11N4645CB are industry stan-

dard 168-pin 8-byte Dual In-line Memory Modules

(DIMMs) which are organized as 4Mx64 and 4Mx72

high speed memory arrays designed with EDO

DRAMs for non-parity or ECC applications. The

DIMMs use 16 (x64) or 18 (x72) 4Mx4 EDO DRAMs

in SOJ packages. The use of EDO DRAMs allows

for a reduction in Page Mode Cycle time from 40ns

(Fast Page) to 25ns for 60ns DRAM modules.

The DIMMs use serial presence detects imple-

mented via a serial EEPROM using the two pin I

protocol. This communication protocol uses Clock

(SCL) and Data I/O (SDA) lines to synchronously

clock data between the master (system logic) and

the slave EEPROM device (DIMM). The EEPROM

device address pins (SA0-2) are brought out to the

DIMM tabs to allow 8 unique DIMM/EEPROM

addresses. The first 128 bytes are utilized by the

DIMM manufacturer and the second 128 bytes of

serial PD data are available to the customer.

All IBM 168-pin DIMMs provide a high performance,

flexible 8-byte interface in a 5.25” long space-saving

footprint. Related products include the buffered

DIMMs (x64, x72 parity and x72 ECC Optmized) for

applications which can benefit from the on-card buff-

ers.

Card Outline

(Front)

(Back)

10 11

94 95

40 41

124 125

168

50H8036

SA14-4623-02

Revised 5/96

Use is further subject to the provisions at the end of this document.

Page 1 of 30

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