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3PMT33AE3

Description
Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE-3
CategoryDiscrete semiconductor    diode   
File Size138KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

3PMT33AE3 Overview

Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE-3

3PMT33AE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage36.7 V
Breakdown voltage nominal value36.7 V
Shell connectionCATHODE
Maximum clamping voltage53.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
3PMT5.0Ae3 thru 3PMT170Ae3
POWERMITE
Low Profile 1500 Watt Unidirectional
Transient Voltage Suppressor
®
SCOTTSDALE DIVISION
DESCRIPTION
These 1500 watt unidirectional transient voltage suppressors offer power-handling
capabilities only found in larger packages. They are most often used for protecting
against transients from inductive switching environments or induced secondary
lightning effects as found in lower surge levels of IEC61000-4-5. With very fast
response times, they are also effective in protection from ESD or EFT. Powermite
®
package features include a full-metallic bottom that eliminates the possibility of
solder-flux entrapment during assembly. They also provide unique locking tabs
acting as an integral heat sink. With its very short terminations, parasitic inductance
is minimized to reduce voltage overshoots during fast-rise-time transients
.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Unidirectional Transient Voltage Suppressors with 5 to
170 Volt Working Peak Voltage (V
WM
)
Very low profile surface mount package (1.1mm)
Integral heat-sink-locking tabs
Compatible with automatic insertion equipment
Full-metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
RoHS Compliant with “e3” suffix part number
APPLICATIONS / BENEFITS
Secondary lightning transient protection
Inductive switching transient protection
Small footprint
Very low parasitic inductance for minimal
voltage overshoot
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively and
IEC61000-4-5 for surge levels defined herein
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000
μs)
Forward Surge Current: 200 Amps at 8.3 ms
Repetition surge rate (duty factor): 0.01%
Thermal resistance: 2.5°C / watt junction to tab
130°C / watt junction to ambient with
recommended footprint
Lead and mounting temperature: 260°C for 10 s
MECHANICAL AND PACKAGING
Terminals: Copper with annealed matte-Tin plating
for RoHS Compliance solderable per MIL-STD-750
method 2026 (consult factory for Tin-Lead plating)
Polarity: Two-leads on side are internally connected
together for anode and backside is cathode
(unidirectional devices only)
Marking: Body marked with P/N and a dot suffix
without 3PMT prefix
(ie. 5.0A•, 12A•, 170A•, etc.)
Molded epoxy package meets UL94V-0
Weight: 0.072 grams (approximate)
Tape & Reel packaging per EIA-481-2 with 16 mm
tape and 5000 units/13 inch reel
PEAK PULSE
CURRENT
I
PP
(FIGURE 4)
AMPS
163.0
145.6
133.9
125.0
116.3
110.3
104.2
97.4
88.2
82.4
75.3
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
1000
1000
500
200
100
50
25
10
5
5
5
TEMPERATURE
COEFFICIENT
OF V
BR
α
V(BR)
%/°C
MAX
.057
.059
.061
.065
.067
.070
.073
.076
.078
.081
.082
ELECTRICAL CHARACTERISTICS
MICROSEMI
PART NUMBER
STANDOFF
VOLTAGE
V
WM
VOLTS
3PMT5.0Ae3
3PMT6.0Ae3
3PMT6.5Ae3
3PMT7.0Ae3
3PMT7.5Ae3
3PMT8.0Ae3
3PMT8.5Ae3
3PMT9.0Ae3
3PMT10Ae3
3PMT11Ae3
3PMT12Ae3
5
6
6.5
7
7.5
8
8.5
9.0
10
11
12
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
6.40
6.67
7.22
7.78
8.33
8.89
9.94
10.0
11.1
12.2
13.3
CLAMPING
VOLTAGE
V
C
@ I
PP
(FIGURE 4)
VOLTS
MAX
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
3PMT5.0Ae3-170Ae3
Copyright
©
2005
8-22-2005 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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