Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.063in (1.6mm) from case for 10s)
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= -30V,
V
GS
= 0V
V
GS
=
±10V
I
D
= 10A, V
GS
= -5V
I
D
= 10A, V
GS
= -4.5V
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
RFD10P03L, RFD10P03LSM
RFP10P03L
V
GS
= 0 to -10V
V
GS
= 0 to -5V
V
GS
= 0 to -1V
V
DS
= -25V, V
GS
= 0V
f = 1MHz
V
DD
= -24V,
I
D
≅
10A,
R
L
= 2.4Ω
V
DD
= 15V, I
D
≅
10A
R
L
= 1.5Ω, R
GS
= 5Ω,
V
GS
= -5V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
50
35
20
-
25
13
1.2
1035
340
35
-
-
T
C
= 25
o
C
T
C
= 150
o
C
MIN
-30
-1
-
-
-
-
TYP
-
-
-
-
-
-
MAX
-
-2
-1
-50
±100
0.200
0.220
100
-
-
-
-
80
30
16
1.5
-
-
-
2.30
100
80
UNITS
V
V
µA
µA
nA
Ω
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
GSS
r
DS(ON)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Forward Voltage
Reverse Recovery Time
NOTE:
1. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%.
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= -10A
I
SD
= -10A, dI
SD
/dt = -100A/µs
MIN
-
-
TYP
-
-
MAX
-1.5
75
UNITS
V
ns
2
RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves
Unless Otherwise Specified
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
-12
-10
I
D
, DRAIN CURRENT (A)
-8
-6
-4
-2
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
Z
θJC
, NORMALIZED THERMAL IMPEDANCE
2.0
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
2
NOTES: DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
I
DM
, PEAK CURRENT CAPABILITY (A)
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
100µs
-100
T
C
= 25
o
C
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
V
GS
= -10V
V
GS
= -5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
175
–
T C
I = I 25
-----------------------
-
150
-10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-1
-1
10ms
100ms
DC
-100
-10
V
DSS
MAX = -30V
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-5
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves
Unless Otherwise Specified
-50
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
-25
PULSE DURATION = 250µs,
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
-20
V
GS
= -10V
V
GS
= -5V
(Continued)
-10
STARTING T
J
= 150
o
C
-15
V
GS
= -4V
-10
If R = 0
t
AV
= (L) (I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
-1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
V
GS
=-3.5V
-5
V
GS
= -3V
0
0
-1.0
-2.0
-3.0
-4.0
-5.0
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
-25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
-55
o
C
r
DS(ON),
DRAIN TO SOURCE
25
o
C
175
o
C
400
I
D
= -20A
I
D
= -10A
I
D
= -5A
I
D
= -2.5A
200
T
C
= 25
o
C
-20
-15
-10
ON RESISTANCE (mΩ)
300
100
-5
0
0
-1.5
-3.0
-4.5
-6.0
0
-2.0
-4.0
-6.0
-8.0
-10.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= -5V, I
D
= -10.0A
1.2
I
D
=- 250uA
1.5
1.1
1.0
1.0
0.5
0.9
0.0
-80
-40
0
40
80
120
160
200
0.8
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4
RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves
Unless Otherwise Specified
1.2
V
GS
= V
DS
, I
D
= -250µA
125
NORMALIZED GATE
THRESHOLD VOLTAGE
SWITCHING TIME (ns)
1.0
t
r
100
t
d(OFF)
75
t
f
50
25
0.4
-80
0
t
d(ON)
(Continued)
150
V
DD
= -15V, I
D
= -10A, R
L
= 1.50Ω
0.8
0.6
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
-30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DD
=BV
DSS
-22.5
V
DD
= BV
DSS
-5.00
V
GS
, GATE TO SOURCE VOLTAGE (V)
1200
1000
C, CAPACITANCE (pF)
V
GS
= 0V,
f
= 1MHz
C
ISS
-3.75
800
600
400
C
OSS
200
C
RSS
0
0
-5
-10
-15
-20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-25
-15
R
L
= 3.0Ω
I
G(REF)
= -0.25mA
0.75 BV
DSS
0.50 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
-2.50
-7.5
0.25 BV
DSS
-1.25
V
GS
= -5V
0
20
I
G(REF)
I
G(ACT)
t, TIME (
µs)
80
I
G(REF)
I
G(ACT)
0.00
NOTE: Refer to Application Notes AN7254 and AN7260.
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