W3DG7263V-D2 datasheet, PDF - EEWORLD Datasheet

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W3DG7263V-D2: Description512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL; File Size150KB，9 Pages; ManufacturerWhite Electronic Designs Corporation; Websitehttp://www.wedc.com/

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W3DG7263V-D2 Overview

512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL

W3DG7263V-D2 Preview

White Electronic Designs

W3DG7263V-D2

512MB – 64Mx72 SDRAM, REGISTER and SPD, w/PLL

FEATURES

Burst Mode Operation

Auto and Self Refresh capability

LVTTL compatible inputs and outputs

Serial Presence Detect with EEPROM

Fully synchronous: All signals are registered on the positive

edge of the system clock

Programmable Burst Lengths: 1, 2, 4, 8 or Full Page

3.3V

0.3V Power Supply

168 Pin DIMM JEDEC

NOTE: Consult factory for availability of:

• Lead-Free Products

• Vendor source control options

• Industrial temperature option

DESCRIPTION

The W3DG7263V is a 64Mx72 synchronous DRAM module

which consists of eighteen 64Mx4 SDRAM components

in TSOP II package, two 18 bit Drive ICs for input control

signal and one 2Kb EEPROM in an 8 pin TSSOP package

for Serial Presence Detect which are mounted on a 168

Pin DIMM multilayer FR4 Substrate.

* This product is subject to change without notice.

PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)

FRONT

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

CB0

CB1

WE#

DQM0

BACK

DQM1

CS0#

DNU

A10/AP

BA1

CK0

DNU

CS2#

DQM2

DQM3

DNU

CB2

CB3

DQ16

DQ17

FRONT

DQ18

DQ19

DQ20

*VREF

*CKE1

DQ21

DQ22

DQ23

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

*CK2

**SDA

**SCL

100

101

102

103

104

105

106

107

108

109

110

111

112

BACK

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

CB4

CB5

CAS#

DQM4

113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

128

129

130

131

132

133

134

135

136

137

138

139

140

BACK

DQM5

CS1#*

RAS#

BA0

A11

*CK1

A12

CKE0

CS3#*

DQM6

DQM7

*A13

CB6

CB7

DQ48

DQ49

141

142

143

144

145

146

147

148

149

150

151

152

153

154

155

156

157

158

159

160

161

162

163

164

165

166

167

168

BACK

DQ50

DQ51

DQ52

REF

REGE

DQ53

DQ54

DQ55

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

*CK3

**SA0

**SA1

**SA2

PIN NAMES

A0 – A12

BA0-1

DQ0-63

CB0-7

CK0

CKE0

CS0#, CS2#

RAS#

CAS#

WE#

DQM0-7

REF

REGE

SDA

SCL

SA0-2

DNU

Address Input (Multiplexed)

Select Bank

Data Input/Output

Check Bit (Data-In/Data-Out)

Clock Input

Clock Enable Input

Chip Select Input

Row Address Strobe

Column Address Strobe

Write Enable

DQM

Power Supply (3.3V)

Ground

Power Supply for Reference

Serial Data I/O

Serial Clock

Address in EEPROM

Do Not Use

No Connect

* These pins are not used in this module.

** These pins should be NC in the system which does

not support SPD.

February 2005

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

FUNCTIONAL BLOCK DIAGRAM

RCS0#

DQM0

DQ0

DQ1

DQ2

DQ3

DQM RS0

I/O 0

I/O 1

I/O 2

I/O 3

DQM RS0

I/O 0

I/O 1

I/O 2

I/O 3

W3DG7263V-D2

DQM4

DQ32

DQ33

DQ34

DQ35

DQM

I/O 0

I/O 1

I/O 2

I/O 3

DQM

I/O 0

I/O 1

I/O 2

I/O 3

RS0

DQ4

DQ5

DQ6

DQ7

DQ36

DQ37

DQ38

DQ39

DQM1

DQ8

DQ9

DQ10

DQ11

DQM RS0

I/O 0

I/O 1

I/O 2

I/O 3

DQM RS0

I/O 0

I/O 1

I/O 2

I/O 3

DQM RS0

I/O 0

I/O 1

I/O 2

I/O 3

DQM5

DQ40

DQ41

DQ42

DQ43

DQM

I/O 0

I/O 1

I/O 2

I/O 3

DQM

I/O 0

I/O 1

I/O 2

I/O 3

DQM

I/O 0

I/O 1

I/O 2

I/O 3

RS0

DQ12

DQ13

DQ14

DQ15

DQ44

DQ45

DQ46

DQ47

10 ohm

CK0

RS0

SDRAM

PLL

CB0

CB1

CB2

CB3

CB4

CB5

CB6

CB7

12pF

RCS2#

DQM2

DQ16

DQ17

DQ18

DQ19

DQM RS2

I/O 0

I/O 1

I/O 2

I/O 3

DQM RS2

I/O 0

I/O 1

I/O 2

I/O 3

DQM6

DQ48

DQ49

DQ50

DQ51

DQM

I/O 0

I/O 1

I/O 2

I/O 3

DQM

I/O 0

I/O 1

I/O 2

I/O 3

RS2

CK1-CK3

10 ohm

12pF

RS2

DQ20

DQ21

DQ22

DQ23

DQ52

DQ53

DQ54

DQ55

SERIAL PD

SCL

SA1

SA2

SDRAM

SDA

DQM3

DQ24

DQ25

DQ26

DQ27

DQM RS2

I/O 0

I/O 1

I/O 2

I/O 3

DQM RS2

I/O 0

I/O 1

I/O 2

I/O 3

DQM7

DQ56

DQ57

DQ58

DQ59

DQM

I/O 0

I/O 1

I/O 2

I/O 3

DQM

I/O 0

I/O 1

I/O 2

I/O 3

RS2

SA0

RS2

DQ28

DQ29

DQ30

DQ31

DQ60

DQ61

DQ62

DQ63

NOTE: DQ wiring may differ than described in

this drawing, however DQ/DQM/CKE/S

relationships must be maintained as shown.

CS0# - CS2#

DQM0 - DQM7

BA0 - BA1

A0 - A12

RAS#

CAS#

CKE0

WE#

REGE

PCK

RCS0# - RCS2#

RDQM0 - RDQM7

RBA0 - RBA1: SDRAMS

RA0 - RA12: SDRAMS

RRAS#: SDRAMS

RCAS#: SDRAMS

RCKE0: SDRAMS

RWE#: SDRAMS

Note: All resistor values are 10 ohms

February 2005

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on any pin relative to V

Voltage on V

supply relative to V

Storage Temperature

Power Dissipation

Short Circuit Current

Symbol

, V

OUT

, V

CCQ

STG

Value

-1.0 ~ 4.6

-55 ~ +150

W3DG7263V-D2

Units

°C

Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

RECOMMENDED DC OPERATING CONDITIONS

Voltage Referenced to: V

= 0V, 0°C ≤ T

≤ 70°

Parameter

Supply Voltage

Input High Voltage

Input Low Voltage

Output High Voltage

Output Low Voltage

Input Leakage Current

Symbol

Min

3.0

2.0

-0.3

2.4

—

-10

Typ

3.3

3.0

—

Max

3.6

CCQ

+0.3

0.8

—

0.4

Unit

μA

= -2mA

Note

Note: 1. V

(max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. V

(min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ V

≤ V

CCQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

= 25 °C, f = 1MHz, V

= 3.3V, V

REF

= 1.4V ± 200mV

Parameter

Input Capacitance (A0-A12)

Input Capacitance (RAS#,CAS#,WE#)

Input Capacitance (CKE0)

Input Capacitance (CLK0)

Input Capacitance (CS0#,CS2#)

Input Capacitance (DQM0-DQM7)

Input Capacitance (BA0-BA1)

Data input/output capacitance (DQ0-DQ63)

Data input/output capacitance (CB0-CB7)

Symbol

IN1

IN2

IN3

IN4

IN5

IN6

IN7

OUT

OUT1

Max

Unit

February 2005

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

OPERATING CURRENT CHARACTERISTICS

= 3.3V, 0°C ≤ T

≤ 70°C

Parameters

Symbol

Conditions

W3DG7263V-D2

Versions

133/100

Units

Note

Operating Current

(One bank active)

Precharge Standby Current

in Power Down Mode

Active standby in current non power-

down mode

Operating current (Burst mode)

CC1

Burst Length = 1

≥ t

(min)

= 0mA

≤ V

(max), t

= 10ns

≥ V

(min), CS ≥ V

(min), t

= 10ns

Input signals are charged one time during 20ns

Io = mA

Page burst

4 Banks activated

CCD

= 2CLK

≥ t

(min)

≤ 0.2V

2430

CC2

CC3

CC4

720

2430

Refresh current

Self refresh current

Notes: 1. Measured with outputs open.

2. Refresh period is 64ms.

CC5

CC6

5130

February 2005

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

0°C ≤ T

≤ 70°C, V

, V

CCQ

= +3.3V ±0.3V

AC CHARACTERISTICS

PARAMETER

Access timefrom CLK (pos.edge)

CL = 3

CL = 2

Address hold time

Address setup time

CLK high-level width

CLK low-level width

Clock cycle time

CL = 3

CL = 2

CKE hold time

CKE setup time

CS#, RAS#, CAS#, WE#, DQM hold time

CS#, RAS#, CAS#, WE#, DQM setup time

Data-in hold time

Data-in setup time

Data-out high-impedance time

CL = 3

CL = 2

Data-out low-impedance time

Data-out hold time (load)

Data-out hold time (no load)

ACTIVE to PRECHARGE command

ACTIVE to ACTIVE command period

ACTIVE to READ or WRITE delay

Refresh period

AUTOREFRESH period

PRECHARGE command period

ACTIVE bank a to ACTIVE bank b command

Transition time

WRITE recovery time

SYMBOL

AC(3)

AC(2)

CK(3)

CK(2)

CKH

CKS

CMH

CMS

HZ(3)

HZ(2)

OHN

RAS

RCD

REF

RFC

RRD

0.3

1 CLK

7ns

Exit SELF REFRESH to ACTIVE command

XSR

1.2

2.7

1.8

0.3

1 CLK

7.5ns

1.2

120,000

0.8

1.5

2.5

7.5

0.8

1.5

0.8

1.5

0.8

1.5

5.4

2.7

1.8

0.3

1 CLK

7.5ns

120,000

MIN

MAX

5.4

0.8

1.5

2.5

7.5

0.8

1.5

0.8

1.5

0.8

1.5

5.4

2.7

1.8

MIN

7.5

MAX

5.4

MIN

W3DG7263V-D2

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

MAX

UNITS

120,000

1.2

NOTE

February 2005

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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W3DG7263V-D2 Related Products

	W3DG7263V-D2	W3DG7263V7D2	W3DG7263V10D2	W3DG7263V75D2
Description	512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL	512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL	512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL	512MB - 64Mx72 SDRAM, REGISTER and SPD, w/PLL
Is it Rohs certified?	-	incompatible	incompatible	incompatible
Maker	-	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation
package instruction	-	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Reach Compliance Code	-	unknow	unknow	unknow
access mode	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	-	5.4 ns	6 ns	5.4 ns
Other features	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	143 MHz	100 MHz	133 MHz
I/O type	-	COMMON	COMMON	COMMON
JESD-30 code	-	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	-	4831838208 bi	4831838208 bi	4831838208 bi
Memory IC Type	-	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	-	72	72	72
Number of functions	-	1	1	1
Number of ports	-	1	1	1
Number of terminals	-	168	168	168
word count	-	67108864 words	67108864 words	67108864 words
character code	-	64000000	64000000	64000000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	-	70 °C	70 °C	70 °C
organize	-	64MX72	64MX72	64MX72
Output characteristics	-	3-STATE	3-STATE	3-STATE
Package body material	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	-	DIMM	DIMM	DIMM
Encapsulate equivalent code	-	DIMM168	DIMM168	DIMM168
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	-	3.3 V	3.3 V	3.3 V
Certification status	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	-	8192	8192	8192
self refresh	-	YES	YES	YES
Maximum standby current	-	0.036 A	0.036 A	0.036 A
Maximum slew rate	-	2.43 mA	2.43 mA	2.43 mA
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	3 V	3 V	3 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	3.3 V
surface mount	-	NO	NO	NO
technology	-	CMOS	CMOS	CMOS
Temperature level	-	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	-	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	-	1.27 mm	1.27 mm	1.27 mm
Terminal location	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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