CY14B116N-Z30XI datasheet, PDF

CY14B116N-Z30XI: DescriptionNon-Volatile SRAM, 1MX16, 30ns, CMOS, PDSO48, ROHS COMPLIANT, MO-142, TSOP1-48; File Size4MB，37 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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Non-Volatile SRAM, 1MX16, 30ns, CMOS, PDSO48, ROHS COMPLIANT, MO-142, TSOP1-48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1480232182
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	30 ns
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	16777216 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	PURE TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	12 mm

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