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SMBD850D-1100-05

Description
1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2
CategoryLED optoelectronic/LED    photoelectric   
File Size192KB,6 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Download Datasheet Parametric View All

SMBD850D-1100-05 Overview

1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2

SMBD850D-1100-05 Parametric

Parameter NameAttribute value
MakerEpitex Inc
package instructionROHS COMPLIANT PACKAGE-2
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current1 A
Number of functions1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesINFRARED LED
Nominal output power600 mW
peak wavelength850 nm
shapeROUND
Base Number Matches1
epitex
Opto-Device & Custom LED
High Power Top LED SMBD850D-1100-05
Lead ( Pb ) Free Product – RoHS Compliant
SMBD850D-1100-05

High Power Top LED
SMBD850D-1100-05 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm
package.
These devices are available to be operated and 1700mW at IFP=3A.
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2)
Package Resin
(3)
Lens
Outer
dimension (Unit: mm)
High Power Top LED
SMBD850D-1100-05
AlGaAs
1000um*1000um
1pce
850nm typ.
Silver Plated on Copper
PPA Resin
Silicone Resin
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
2500
1000
3000
5
10
120
-40 ~ +100
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition Minimum
I
F
=350mA
V
F
Forward Voltage
I
F
=1000mA
V
FP
I
FP
=3A
I
F
=1000mA
450
Radiated Power
P
O
I
FP
=3A
I
F
=1000mA
Radiant Intensity
I
E
I
FP
=3A
Peak Wavelength
P
I
F
=1000mA
840
Half Width

I
F
=1000mA
Viewing Half Angle


I
F
100mA
Rise Time
tr
I
F
=1000mA
Fall Time
tf
I
F
=1000mA
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.6
1.8
2.7
600
1700
470
1300
850
30
±43
280
280
Maximum
1.9
Unit
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
ns
865
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

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