MJD112 (NPN),
MJD117 (PNP)
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
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•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
DPAK
CASE 369C
DPAK−3
CASE 369D
MARKING DIAGRAMS
AYWW
J11xG
DPAK
A
Y
WW
x
G
YWW
J11xG
DPAK−3
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
November, 2013
−
Rev. 13
1
Publication Order Number:
MJD112/D
MJD112 (NPN), MJD117 (PNP)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
Max
100
100
5
2
4
50
20
0.16
1.75
0.014
−65
to +150
Unit
Vdc
Vdc
Vdc
Adc
I
B
P
D
mAdc
W
W/°C
W
W/°C
°C
P
D
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
°C/W
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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2
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2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 Mhz)
MJD117, NJVMJD117T4G
MJD112, NJVMJD112G, NJVMJD112T4G
Current−Gain
−
Bandwidth Product
(I
C
= 0.75 Adc, V
CE
= 10 Vdc, f = 1 MHz)
Base−Emitter On Voltage
(I
C
= 2 Adc, V
CE
= 3 Vdc)
Base−Emitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 40 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 2 Adc, I
B
= 8 mAdc)
(I
C
= 4 Adc, I
B
= 40 mAdc)
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 3 Vdc)
(I
C
= 2 Adc, V
CE
= 3 Vdc)
(I
C
= 4 Adc, V
CE
= 3 Vdc)
Emitter−Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
Collector−Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
Characteristic
MJD112 (NPN), MJD117 (PNP)
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V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
I
CBO
I
CEO
I
EBO
I
EBO
C
ob
h
FE
f
T
500
1000
200
Min
100
25
−
−
−
−
−
−
−
−
−
−
−
−
12,000
−
Max
200
100
2.8
10
20
20
−
4
2
3
2
2
−
mAdc
mAdc
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−
3
MJD112 (NPN), MJD117 (PNP)
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
TUT
V
2
APPROX
+8 V
0
V
1
APPROX
-12 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
R
B
51
D
1
+4V
≈
8k
≈
60
V
CC
- 30 V
R
C
SCOPE
t, TIME (
μ
s)
4
t
s
2
t
f
t
r
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
1
0.8
0.6
0.4
PNP
NPN
0.1
25
ms
t
d
@ V
BE(off)
= 0 V
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.2
0.04 0.06
0.4 0.6
0.2
1
I
C
, COLLECTOR CURRENT (AMP)
2
4
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 3. Thermal Response
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4
MJD112 (NPN), MJD117 (PNP)
ACTIVE−REGION SAFE−OPERATING AREA
T
A
T
C
2.5 25
500
ms
1 ms
5 ms
dc
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
T
J
= 150°C
CURVES APPLY BELOW RATED V
CEO
2
3
5
7
10
20
30
50
70 100
200
PD, POWER DISSIPATION (WATTS)
100
ms
IC, COLLECTOR CURRENT (AMP)
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
2 20
1.5 15
T
A
SURFACE
MOUNT
T
C
1 10
0.5
5
0
0
25
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
75
100
T, TEMPERATURE (°C)
125
15
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
J(pk)
= 150_C; T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
T
C
= 25°C
C, CAPACITANCE (pF)
100
70
50
C
ob
30
C
ib
20
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
6
10
20
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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