1N3643 thru 1N3647
1N4254 thru 1n4257
1N5181 thru 1N5184
SCOTTSDALE DIVISION
VOIDLESS-HERMETICALLY-SEALED
HIGH VOLTAGE RECTIFIERS
DESCRIPTION
These “standard recovery” high voltage rectifier diode series are military qualified to
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for
high-reliability where a failure cannot be tolerated for high voltage applications.
These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. Surface mount MELF package
configurations are also available by adding “SM” suffix. Microsemi also offers
numerous other rectifier products to meet higher and lower current ratings with
various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
APPEARANCE
WWW .
Microsemi
.C
OM
S Package
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
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JEDEC registered 1N3643 thru 1N3647, 1N4254
thru 1N4257, and 1N5181 thru 1N5187 series
Voidless Hermetically Sealed Glass Package
Triple Layer Passivation
Internal “Category
I”
Metallurgical bonds
Lowest Reverse Leakage Available
Lowest Thermal Resistance Available
Absolute High Voltage / High Temperature Stability
1N5181 thru 1N5184 meet or exceed requirements
of MIL-S-19500/389
1N3644 thru 1N3647 JAN, JANTX types available
per MIL-S19500/279
Surface mount equivalents also available in a square
end-cap MELF configuration with “SM” suffix
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APPLICATIONS / BENEFITS
High voltage standard recovery rectifiers 1000 to
10,000 V
Military and other high-reliability applications
Applications include bridges, half-bridges, catch
diodes, voltage multipliers,
X-ray machines,
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power supplies, transmitters, and radar
equipment
High forward surge current capability
Extremely robust construction
Low thermal resistance
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
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Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 38
o
C/W junction to lead at 3/8
inch (10 mm) lead length from body
Average Rectified Forward Current (I
O
):
1N3643 thru 1N3647: 0.250 Amps @ T
A
= 55ºC
0.150 Amps @ T
A
= 100ºC
1N4254 thru 1N4257: 0.250 Amps @ T
A
= 55ºC
0.150 Amps @ T
A
= 100ºC
1N5181 thru 1N5184: 0.100 Amps @ T
A
= 55ºC
0.060 Amps @ T
A
= 100ºC
Forward Surge Current: See Electrical
Characteristics for surge at 8.3 ms half-sine wave
Solder Temperatures: 260ºC for 10 s (maximum)
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MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 400 mg (approx)
See package dimensions on last page
1N3643 thru 1N3647
1N4254 thru 1n4257
1N5181 thru 1N5184
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•
Copyright
2004
12-29-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N3643 thru 1N3647
1N4254 thru 1n4257
1N5181 thru 1N5184
SCOTTSDALE DIVISION
VOIDLESS-HERMETICALLY-SEALED
HIGH VOLTAGE RECTIFIERS
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
1000
1500
2000
2500
3000
1500
2000
2500
3000
4000
5000
7500
10,000
AVERAGE
RECTIFIED
CURRENT
I
O
mA
55 C
250
250
250
250
250
250
250
250
250
100
100
100
100
o
WWW .
Microsemi
.C
OM
TYPE
MAXIMUM
FORWARD
VOLTAGE
V
F
(See Notes
1 & 2)
VOLTS
o
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
25 C
5
5
5
5
5
1
1
1
1
-
-
-
-
o
MAXIMUM
SURGE
CURRENT
@ 8.3 ms
AMPS
o
o
1N3643
JAN1N3644
JAN1N3645
JAN1N3646
JAN1N3647
1N4254
1N4255
1N4256
1N4257
1N5181
1N5182
1N5183
1N5184
100 C
150
150
150
150
150
150
150
150
150
60
60
60
60
5.0
5.0
5.0
5.0
5.0
3.5
3.5
3.5
3.5
10
10
10
10
(1)
(1)
(1)
(1)
(1)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
55 C
-
-
-
-
-
-
-
-
-
5
5
5
5
o
µA
125 C
-
-
-
-
-
20
20
20
20
-
-
-
-
175 C
-
-
-
-
-
-
-
-
-
1000
1000
1000
1000
14
14
14
14
14
10
10
10
10
4
4
4
4
NOTE 1:
VF @ 250mA
NOTE 2:
VF @ 100mA
Symbol
V
BR
V
RWM
V
F
I
R
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
GRAPHS
1N3643 thru 1N3647
1N4254 thru 1n4257
1N5181 thru 1N5184
FIGURE 1
1N3643-47 and 1N4254-57
FIGURE 2
1N5181-84
Copyright
2004
12-29-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Microcontroller MCU
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