MGFC40V4450-51 datasheet, PDF - EEWORLD Datasheet

MGFC40V4450-51: DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size61KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGFC40V4450-51 Overview

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	SOURCE
Configuration	SINGLE
Maximum drain current (Abs) (ID)	7.5 A
Maximum drain current (ID)	6 A
FET technology	JUNCTION
highest frequency band	C BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	42.8 W
Minimum power gain (Gp)	9 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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