AS4C1M16S-6TCN datasheet, PDF - EEWORLD Datasheet

AS4C1M16S-6TCN: DescriptionSynchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, TSOPII-50; Categorystorage storage; File Size915KB，54 Pages; ManufacturerAlliance Memory; Environmental Compliance

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Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, TSOPII-50

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	TSOP2,
Reach Compliance Code	compliant
Factory Lead Time	8 weeks
access mode	DUAL BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G50
length	20.95 mm
memory density	16777216 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	50
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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