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RL101

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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RL101 Overview

1 A, SILICON, SIGNAL DIODE

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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RL101
THRU
RL107
1 Amp Rectifier
50 - 1000 Volts
Low Current Leakage
Metalurgically Bonded Construction
Low Cost
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 50
°C/W
Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
A-405
D
RL101
RL102
RL103
RL104
RL105
RL106
RL107
---
---
---
---
---
---
---
35V
70V
140V
280V
420V
560V
700V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0A
T
A
= 75°C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
1.1V
I
FM
= 1.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
C
DIMENSIONS
INCHES
MIN
.166
.080
---
1.000
MM
MIN
4.10
2.00
---
25.40
DIM
A
B
C
D
MAX
.205
.107
.024
---
MAX
5.20
2.70
.60
---
NOTE
www.mccsemi.com

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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