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RM20TN-H

Description
3 PHASE, 24 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size26KB,2 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

RM20TN-H Overview

3 PHASE, 24 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

RM20TN-H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
package instructionR-XUFM-X5
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeR-XUFM-X5
Maximum non-repetitive peak forward current255 A
Number of components6
Phase3
Number of terminals5
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current24 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED

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