AP4500GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
S1G1
S2
G2
®
PMPAK 3x3
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1/D2
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
D1
20V
21mΩ
8.9A
-20V
60mΩ
-5.3A
D2
Description
AP4500 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK
®
3x3 is special for voltage conversion application
using standard infrared reflow technique with the backside heat
sink to achieve the good thermal performance.
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
20
+12
8.9
7.1
20
2.5
-55 to 150
-55 to 150
P-channel
-20
+12
-5.3
-4.3
-20
Units
V
V
A
A
A
W
℃
℃
Continuous Drain Current
3
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
10
50
Unit
℃/W
℃/W
1
201206071
Data and specifications subject to change without notice
AP4500GYT-HF
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=8A
V
GS
=2.5V, I
D
=4A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4A
V
DS
=16V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=4A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω
V
GS
=5V
V
GS
=0V
V
DS
=10V
f=1.0MHz
Min.
20
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
16.6
25.4
0.75
18
-
-
8
1.1
4
11
10
16
6
450
140
130
Max. Units
-
21
36
1.5
-
10
+100
12.8
-
-
-
-
-
-
720
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
o
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=2.1A, V
GS
=0V
I
S
=6A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
21
14
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
2
AP4500GYT-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-3A
V
DS
=-16V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=-3A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-5V
V
GS
=0V
V
DS
=-10V
f=1.0MHz
Min.
-20
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
45.8
62.6
-0.73
12
-
-
9
1.3
3
8
15
26
21
710
125
110
Max.
-
60
90
-1.5
-
-10
+100
14.4
-
-
-
-
-
-
1140
-
-
Unit
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-2.1A, V
GS
=0V
I
S
=-3A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
19
10
Max.
-1.2
-
-
Unit
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec, 90
o
C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4500GYT-HF
N-Channel
20
20
T
A
=25 C
16
o
I
D
, Drain Current (A)
12
V
G
= 2.0V
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
= 150 C
16
o
5.0V
4.5V
3.5V
2.5V
V
G
= 2.0V
12
8
8
4
4
0
0
2
4
6
8
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.8
I
D
=4A
T
A
=25 C
Normalized R
DS(ON)
o
I
D
=8A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
30
1.4
20
1.0
10
1
2
3
4
5
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
I
D
=250uA
6
1.2
4
o
T
j
=150 C
T
j
=25
o
C
Normalized V
GS(th)
I
S
(A)
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4500GYT-HF
N-Channel
5
600
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
4
I
D
=4A
V
DS
= 16 V
C (pF)
500
C
iss
400
3
300
2
200
1
100
C
oss
C
rss
0
0
3
6
9
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
Operation in this area
limited by R
DS(ON)
100us
1ms
0.2
I
D
(A)
0.1
1
0.1
0.05
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 90℃/W
10ms
100ms
1s
0.1
0.02
o
T
A
=25 C
Single Pulse
DC
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
V
DS
=5V
8
I
D
, Drain Current (A)
20
I
D
, Drain Current (A)
6
T
j
=150
o
C
10
T
j
=25
o
C
4
T
j
= -40
o
C
2
0
0
1
2
3
4
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
5
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