ALLIANCE MEMORY, INC
Rev. 1.2
AS6C8008A
1024K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Initial Issue
Revised ORDERING INFORMATION in page 12
Deleted E grade
Issue Date
Dec.18.2009
Aug.30.2010
Apr. 12.2011
1
ALLIANCE MEMORY, INC
Rev. 1.2
AS6C8008A
1024K X 8 BIT LOW POWER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 20mA (TYP.)
Standby current : 1.5A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
GENERAL DESCRIPTION
The AS6C8008A is a 8,388,608-bit low power CMOS
static random access memory organized as 1,048,576
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of operating
temperature.
The AS6C8008A is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The AS6C8008A operates from a single power supply
of 2.7V ~ 3.6V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Product
Family
AS6C8008A
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
Speed
55ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
1.5µA(SL)
20mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A19
DQ0 – DQ7
DECODER
1024Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A19
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
2
ALLIANCE MEMORY, INC
Rev. 1.2
AS6C8008A
1024K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A
B
C
D
E
F
G
H
NC
NC
DQ0
OE#
NC
NC
A0
A3
A5
A1
A4
A6
A7
A2
CE#
NC
CE2
NC
DQ4
Vss DQ1 A17
Vcc DQ2
DQ3
NC
A18
NC
NC
A8
NC
A14
A12
A9
DQ5 Vcc
A16 DQ6 Vss
A15
NC
DQ7
NC
A19
A13 WE#
A10
A11
1
2
3
4
TFBGA
5
6
3
ALLIANCE MEMORY, INC
Rev. 1.2
AS6C8008A
1024K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
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ALLIANCE MEMORY, INC
Rev. 1.2
AS6C8008A
1024K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
- 55
CE# = V
IL
and CE2 = V
IH
I
CC
I
I/O
= 0mA
- 70
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V
I
CC1
I
I/O
= 0mA
other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL
I
SB
Other pins at V
IL
or V
IH
LL
LLI
CE#
≧V
CC
-0.2V
Standby Power
*5
Supply Current
25
℃
SL
or CE2
≦
0.2V
I
SB1
*5
SLI
Other pins at 0.2V
40
℃
or V
CC
-0.2V
SL
SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25
℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
TYP.
3.0
-
-
-
-
2.7
-
30
20
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
40
30
UNIT
V
V
V
µA
µA
V
V
mA
mA
-
4
8
mA
-
-
-
-
-
-
-
0.15
5
5
1.5
1.5
1.5
1.5
1
30
50
5
5
15
20
mA
µA
µA
µA
µA
µA
µA
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
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