EEWORLDEEWORLDEEWORLD

Part Number

Search

ZV950V2

Description
33.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size62KB,6 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZV950V2 Overview

33.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZV950V2 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Minimum breakdown voltage12 V
Processing package descriptionSurface mount PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.3000 W
Diode typevariable capacitance diode
minimum quality factor250
Diode capacitance deviation10.45 %
Rated diode capacitance33.5 pF
Minimum diode permittivity2
Variable capacitance diode classificationHYPERABRUPT
950 series
SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES
ZV950V2, ZV952V2, ZV953V2, ZMDC953, FSD273
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics, low voltage
operation and high Q. Low reverse current ensures very low phase
noise performance. These parts can be used with control voltages from
0.5V to 2.5V, making them ideal for 3 volt systems. Available in
miniature surface mount packages.
Features
Close tolerance C-V characteristics
Tuning from 0.5 to 2.5 Volts to suit 3 volt systems
Low I
R
(typically 10pA)
Excellent phase noise performance
High Q at low voltage
Miniature surface mount packages
Band selection for DAB applications - FSD273
Applications
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
Digital Radio receivers
ISSUE 2 - MAY 2002
1

ZV950V2 Related Products

ZV950V2 FSD273
Description 33.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 33.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Number of terminals 3 3
Number of components 2 2
Minimum breakdown voltage 12 V 12 V
Processing package description Surface mount PACKAGE-3 Surface mount PACKAGE-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials silicon silicon
Maximum power consumption limit 0.3000 W 0.3000 W
Diode type variable capacitance diode variable capacitance diode
minimum quality factor 250 250
Diode capacitance deviation 10.45 % 10.45 %
Rated diode capacitance 33.5 pF 33.5 pF
Minimum diode permittivity 2 2
Variable capacitance diode classification HYPERABRUPT HYPERABRUPT

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号