FCH077N65F — N-Channel SuperFET
®
II FRFET
®
MOSFET
June 2014
FCH077N65F
N-Channel SuperFET
®
II FRFET
®
MOSFET
650 V, 54 A, 77 mΩ
Features
• 700 V @ T
J
= 150°C
• Typ. R
DS(on)
= 68 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 126 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 458 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET
®
MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
D
G
G
D
S
TO-247
long leads
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25
o
C)
- Derate Above 25 C
o
FCH077N65F_F155
650
±20
(f > 1 Hz)
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
- DC
- AC
- Continuous (T
C
= 25
o
C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
±30
54
32
162
1128
11
4.81
100
50
481
3.85
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
C
o
C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
FCH077N65F_F155
0.26
40
Unit
o
C/W
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
www.fairchildsemi.com
FCH077N65F — N-Channel SuperFET
®
II FRFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FCH077N65F_F155
Top Mark
FCH077N65F
Package
TO-247 G03
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
= 0 V, I
D
= 1 mA, T
J
= 25°C
V
GS
= 0 V, I
D
= 1 mA, T
J
= 150°C
I
D
= 1 mA, Referenced to 25
o
C
V
DS
= 520 V, V
GS
= 0 V, T
C
= 125
o
C
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 650 V, V
GS
= 0 V
650
700
-
-
-
-
-
-
0.79
-
144
-
-
-
-
10
-
±100
V
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 5.4 mA
V
GS
= 10 V, I
D
= 27 A
V
DS
= 20 V, I
D
= 27 A
3
-
-
-
68
42
5
77
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
Q
gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
f = 1 MHz
V
DS
= 100 V, V
GS
= 0 V,
f = 1 MHz
V
DS
= 380 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V to 400 V, V
GS
= 0 V
V
DS
= 380 V, I
D
= 27 A,
V
GS
= 10 V
(Note 4)
-
-
-
-
-
-
-
-
-
5345
165
0.8
97
693
126
28
53
0.7
7109
220
-
-
-
164
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 380 V, I
D
= 27 A,
V
GS
= 10 V, R
g
= 4.7
Ω
(Note 4)
-
-
-
-
40
35
113
5
90
80
236
20
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I
AS
= 11 A, R
G
= 25
Ω,
Starting T
J
= 25°C.
3. I
SD
≤
27 A, di/dt
≤
200 A/μs, V
DD
≤
380 V, Starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
SD
= 27 A
V
GS
= 0 V, I
SD
= 27 A,
dI
F
/dt = 100 A/μs
-
-
-
-
-
-
-
-
163
0.9
54
162
1.2
-
-
A
A
V
ns
μC
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
2
www.fairchildsemi.com
FCH077N65F — N-Channel SuperFET
®
II FRFET
®
MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1000
V
GS
=
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Figure 2. Transfer Characteristics
200
100
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
I
D
, Drain Current[A]
100
I
D
, Drain Current[A]
150 C
o
10
10
*Notes:
1. 250
μ
s Pulse Test
25 C
o
-55 C
o
1
0.1
2. T
C
= 25 C
o
1
V
DS
, Drain-Source Voltage[V]
10
20
1
3
4
5
6
7
V
GS
, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.14
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
100
10
1
25 C
o
*Note: T
C
= 25 C
I
S
, Reverse Drain Current [A]
o
*Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
0.12
150 C
o
0.10
V
GS
= 10V
0.1
0.01
0.001
0.0
0.08
V
GS
= 20V
0.06
0
32
64
96
I
D
, Drain Current [A]
128
160
0.4
0.8
1.2
1.6
V
SD
, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
100000
10000
C
iss
Figure 6. Gate Charge Characteristics
10
*Note: I
D
= 27A
V
GS
, Gate-Source Voltage [V]
V
DS
= 130V
V
DS
= 325V
V
DS
= 520V
8
Capacitances [pF]
1000
100
10
1
*Note:
1. V
GS
= 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6
C
oss
4
2
C
rss
0.1
0.1
1
10
100
V
DS
, Drain-Source Voltage [V]
700
0
0
26
52
78
104
Q
g
, Total Gate Charge [nC]
130
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
3
www.fairchildsemi.com
FCH077N65F — N-Channel SuperFET
®
II FRFET
®
MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
2.5
*Notes:
1. V
GS
= 10V
2. I
D
= 27A
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
*Notes:
1. V
GS
= 0V
2. I
D
= 10mA
1.1
2.0
1.0
1.5
0.9
1.0
0.8
-100
-50
0
50
100
150
o
T
J
, Junction Temperature [ C]
200
0.5
-100
-50
0
50
100
150
o
T
J
, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
200
100
100
μ
s
Figure 10. Maximum Drain Current
vs. Case Temperature
60
10
μ
s
I
D
, Drain Current [A]
48
I
D
, Drain Current [A]
10
1ms
DC
36
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
24
12
0.1
1
10
100
V
DS
, Drain-Source Voltage [V]
1000
0
25
50
75
100
125
o
T
C
, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
30
24
E
OSS
, [
μ
J]
18
12
6
0
0
130
260
390
520
V
DS
, Drain to Source Voltage [V]
650
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
4
www.fairchildsemi.com
FCH077N65F — N-Channel SuperFET
®
II FRFET
®
MOSFET
Typical Performance Characteristics
(Continued)
Figure 12. Transient Thermal Response Curve
1
Z
θ
JC
(t),
Thermal Response [ C/W]
o
0.1
0.5
0.2
0.1
0.05
P
DM
t
1
t
2
o
0.01
0.02
0.01
Single pulse
*Notes:
1. Z
θ
JC
(t) = 0.26 C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.001
-5
10
10
-4
10
10
t
1
,
Rectangular Pulse Duration [sec]
-3
-2
10
-1
1
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
5
www.fairchildsemi.com
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