FQD6N60CTM_WS datasheet, PDF - EEWORLD Datasheet

FQD6N60CTM_WS: Descriptionmosfet 600v N-Ch mosfet qfet; Categorysemiconductor Discrete semiconductor; File Size676KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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mosfet 600v N-Ch mosfet qfet

Parameter Name	Attribute value
Manufacture	Fairchild Semiconduc
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Breakdown Voltage	30 V
Id - Continuous Drain Curre	4 A
Rds On - Drain-Source Resistance	2 Ohms
Configurati	Single
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipati	80 W
Mounting Style	SMD/SMT
Package / Case	DPAK-2
Packaging	Reel
Channel Mode	Enhanceme
Fall Time	45 ns
Minimum Operating Temperature	- 55 C
Rise Time	45 ns
Factory Pack Quantity	2500
Typical Turn-Off Delay Time	45 ns
Unit Weigh	260.370 mg

	FQD6N60CTM_WS
Description	mosfet 600v N-Ch mosfet qfet
Manufacture	Fairchild Semiconduc
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Breakdown Voltage	30 V
Id - Continuous Drain Curre	4 A
Rds On - Drain-Source Resistance	2 Ohms
Configurati	Single
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipati	80 W
Mounting Style	SMD/SMT
Package / Case	DPAK-2
Packaging	Reel
Channel Mode	Enhanceme
Fall Time	45 ns
Minimum Operating Temperature	- 55 C
Rise Time	45 ns
Factory Pack Quantity	2500
Typical Turn-Off Delay Time	45 ns
Unit Weigh	260.370 mg

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